A Novel Approach to Packaging High-Power and High-Temperature SiC Modules for Double-sided Cooling
Agency / Branch:
DOD / OSD
In response to OSD/AF SBIR Topic No. OSD06-EP7, we propose to develop a novel and simple approach to packaging high-temperature and high-power SiC modules. The approach, simple to implement and suitable for auto-processing, is proposed to address the problems of (i) the mechanical stress induced degradations such as peeling, cracking, voiding and fracturing due to mismatch of material coefficients of thermal expansion(CTE), (ii) the package material degradation due to operation under high and wide temperature and oxidizing conditions, (iii) the metallurgical incompatibility and interconnect thermal cycling degradation, (iv) the high thermal impedance between device junction and module baseplate, and (v) the parasitic impedance for high frequency operation targeting ultimately up to 250kHz. Double-sided cooling along with hermetical sealing is proposed to achieve the ultimate performance capability of SiC power modules under high and wide temperature conditions. Phase I will focus on the demonstration of the feasibility of the proposed concept through computer modeling and simulations and through experimental demonstration of a high-voltage and high-current SiC power module. Phase II will carriy out the major R&D work based on feasibility demonstrated in Phase I to develop 600V-1.8kV high power phase-legs and three phase power modules up to 300A for >300C operations. Privately funded Phase III will address auto-processing issues for wide-spread commercialization of the SiC power modules.
Small Business Information at Submission:
UNITED SILICON CARBIDE, INC.
New Brunswick Technology Center 100 Jersey Ave. Building A New Brunswick, NJ 08901
Number of Employees: