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A Novel Approach to Packaging High-Power and High-Temperature SiC Modules for…

Award Information

Agency:
Department of Defense
Branch:
Office of the Secretary of Defense
Award ID:
82980
Program Year/Program:
2007 / SBIR
Agency Tracking Number:
O063-EP7-1282
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
United Silicon Carbide, Inc
7 Deer Park Drive, Suite E Monmouth Junction, NJ -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2007
Title: A Novel Approach to Packaging High-Power and High-Temperature SiC Modules for Double-sided Cooling
Agency / Branch: DOD / OSD
Contract: FA8650-07-M-2716
Award Amount: $100,000.00
 

Abstract:

In response to OSD/AF SBIR Topic No. OSD06-EP7, we propose to develop a novel and simple approach to packaging high-temperature and high-power SiC modules. The approach, simple to implement and suitable for auto-processing, is proposed to address the problems of (i) the mechanical stress induced degradations such as peeling, cracking, voiding and fracturing due to mismatch of material coefficients of thermal expansion(CTE), (ii) the package material degradation due to operation under high and wide temperature and oxidizing conditions, (iii) the metallurgical incompatibility and interconnect thermal cycling degradation, (iv) the high thermal impedance between device junction and module baseplate, and (v) the parasitic impedance for high frequency operation targeting ultimately up to 250kHz. Double-sided cooling along with hermetical sealing is proposed to achieve the ultimate performance capability of SiC power modules under high and wide temperature conditions. Phase I will focus on the demonstration of the feasibility of the proposed concept through computer modeling and simulations and through experimental demonstration of a high-voltage and high-current SiC power module. Phase II will carriy out the major R&D work based on feasibility demonstrated in Phase I to develop 600V-1.8kV high power phase-legs and three phase power modules up to 300A for >300C operations. Privately funded Phase III will address auto-processing issues for wide-spread commercialization of the SiC power modules.

Principal Investigator:

Leonid Fursin
Sr. Research Engineer
7325659500
UnitedSiC@UnitedSiC.com

Business Contact:

Maurice Weiner
Vice President
7325659500
USCWeiner@unitedsic.com
Small Business Information at Submission:

UNITED SILICON CARBIDE, INC.
New Brunswick Technology Center 100 Jersey Ave. Building A New Brunswick, NJ 08901

EIN/Tax ID: 223527296
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No