High-Voltage and High-Frequency Power Switch for Next Generation Transmit Receiver Module Power Supplies
Agency / Branch:
DOD / MDA
In response to SBIR topic MDA08-029, USCI proposes to develop a unique 4H-SiC super-junction lateral JFET (SL-JFET), based on a novel and simple design, to solve all of the remaining problems facing the development of 4H-SiC power switches for resonant high-frequency power converter in radar applications, including the problems of high output coupling capacitance of vertical SiC MOSFETs that lead to low resonant frequency and efficiency, low channel electron mobility that leads to a high specific resistance and hence low resonant switching frequency and efficiency,low gate oxide reliability under high-temperature and high electric field which lead to MOSFET gate threshold voltage drift, and a lack of reliable passivation for GaN power switches. In Phase I, we plan to design and optimize the device structure, simulate and predict the performance characteristics of the device, develop a circuit model for high frequency inverter simulations, design the layout and masks, develop the critical processing technologies needed for the device fabrication. In Phase II, we propose to fabricate multiple batches of the optimized device targeting the high-voltage and high-frequency required for the inverter, demonstrate high-frequency switching with packaged devices. We will focus on commercialization development under privately funded Phase II.
Small Business Information at Submission:
UNITED SILICON CARBIDE, INC.
New Brunswick Technology Center 100 Jersey Ave.Building A New Brunswick, NJ 08901
Number of Employees: