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Revolutionary Photoreceivers Based on Combining Si-MOS Process with SiGe Nanotechnology

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8750-04-C-0152
Agency Tracking Number: F041-214-1585
Amount: $99,999.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: AF04-214
Solicitation Number: 2004.1
Timeline
Solicitation Year: 2004
Award Year: 2004
Award Start Date (Proposal Award Date): 2004-04-06
Award End Date (Contract End Date): 2005-01-06
Small Business Information
12725 SW Millikan Way, Suite 300
Beaverton, OR 97005
United States
DUNS: 124348652
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 James Gates
 Senior Engineer
 (503) 906-7906
 georgew@voxtel-inc.com
Business Contact
 George Williams
Title: President
Phone: (503) 906-7906
Email: georgew@voxtel-inc.com
Research Institution
N/A
Abstract

Voxtel, Inc. proposes to optimize the design of a SiGe quantum dot (QD) detector capable of 1300nm and 1550nm response, with good responsivity at zero volt bias voltage, and with low dark current. The proposed SiGe quantum dot detectors makes it feasible to integrate long wavelength near infrared optoelectronic devices into CMOS chips, fabricated on commercial CMOS processes. Embedding SiGe nanostructures, i.e. very narrow films, islands and clusters, into heterostructures deposited on Si wafers open new routes for a variety of Si devices monolithic integration of opto-electronic on Si, and the proposed effort, by developing the low temperature growth processes necessary for commercial CMOS integration, characterizing the electrical and optical characteristics of the SiGe QDs, as well as stacked QD layers, and interfacing to Voxtel's existing high speed Si CMOS photoreceiver circuits makes significant strides to achieving the goals of low cost, silicon-compatible NIR photoreceivers.

* Information listed above is at the time of submission. *

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