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Ultra-low Noise, High Bandwidth, 1550nm HgCdTe APD

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
72029
Program Year/Program:
2004 / SBIR
Agency Tracking Number:
034977
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Voxtel Inc.
15985 NW Schendel Avenue Suite 200 Beaverton, OR -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2004
Title: Ultra-low Noise, High Bandwidth, 1550nm HgCdTe APD
Agency: NASA
Contract: NNG04CA94C
Award Amount: $70,000.00
 

Abstract:

Voxtel Inc. proposes to optimize the design of a large area, 1.55?m sensitive HgCdTe avalanche photodiode (APD) that achieves high gain with nearly no excess noise. By optimizing the APD device structure and by exploiting the most recent insight into the material?s ionization characteristics, we have engineered the vertical HgCdTe APD for nearly noiseless gain (ultra low k) with high bandwidth and with low dark current. As large area photodetectors necessarily have high dark current and increased capacitance, we will tradeoff the performance of a large area detector design with that of a pixilated design. A pixilated detector can reduce the amplifier noise and dark current in the local of the amplified events to sufficiently low levels for photon counting. Through the use of our low noise, high unit cell density, amplifier integrated circuits, we will demonstrate nearly ideal receiver performance for space optical communications applications.

Principal Investigator:

James Gates
Principal Investigator
5032434633
jimgates@voxtel-inc.com

Business Contact:

George Williams
Business Official
5032434633
georgew@voxtel-inc.com
Small Business Information at Submission:

Voxtel, Inc.
614 SW 11th Avenue Portland, OR 97205

EIN/Tax ID: 931285205
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No