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High Efficiency, Large-area, 1550 nm InGaAs Photodiodes
- Small Business Information
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Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 1
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Fiscal Year: 2009Title: High Efficiency, Large-area, 1550 nm InGaAs PhotodiodesAgency / Branch: DOC / NISTContract: N/AAward Amount: $89,998.00
Abstract:
A stable, well characterized InGaAs materials growth and photodetector fabrication process will be used to fabricate matched photodiodes optimized for balanced homodyne detection. The 1-mm-diameter p-i-n photodetectors will be manufactured back-illuminated with a 5-micron absorber, allowing residual light to reflect off the front-side metal to make a double pass through the active layer. Ultra-high-purity InGaAs will be used so that the absorber can operate fully depleted at relatively low operating voltages (< -5 VDC). The ultra-pure InGaAs will also reduce variation across the 1-mm-diameter detector and prevent breakdown. Operating the detector fully depleted will decrease the carrier transport time and therefore reduce carrier recombination; it will also reduce the detector¿s capacitance. So that stray capacitance is minimized, the detectors will be bump-bonded directly to a sub-mount; the detector will then be integrated with low-noise transimpedance amplifiers and integrated with a three-stage thermoelectric cooler in a hermetic TO-5 package. The matched detectors will be testing and characterized in an optical homodyne detection system.Small Business Information at Submission:Business Contact:
Voxtel, Inc.
12725 SW Millikan Way, Suite 230 Beaverton, OR 97005EIN/Tax ID:DUNS: N/ANumber of Employees: N/AWoman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
Award Information
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Agency: Department of Commerce |
Branch: National Institute of Standards and Technology |
Award ID: 89981 |
Program Year/Program: 2009 / SBIR |
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Agency Tracking Number: 09-105-5 |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |