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Company Information:

Company Name: Witech (widegap Technology,
City: Westlake Village
State: CA
Zip+4: 91362
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $459,884.00 7
SBIR Phase II $2,784,226.00 4

Award List:

Ultra Low Phase Noise GaAs MOSFETs

Award Year / Program / Phase: 1996 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Brian Thibeault
Award Amount: $60,000.00
Abstract:
WideGap Technology (WiTech) proposes to develop a GaAs based MOSFET technology with Al(2)0(3) as the gate insulator and surface passivant. The wet oxide is formed by the steam oxidation of AlAs. During phase I we will focus on : Al(2)0(3)/GaAs interface state density reduction, investigate the… More

Full Color Monolithic GaN-based LED's

Award Year / Program / Phase: 1996 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: David Kapolnek
Award Amount: $60,000.00

GaN Power MISFETs

Award Year / Program / Phase: 1996 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: David Kapolnek
Award Amount: $60,000.00

GaN Power MISFETs

Award Year / Program / Phase: 1997 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: David Kapolnek
Award Amount: $704,226.00
Abstract:
WideGap Technology (WiTech) proposes to develop AlN/GaN MISFETs based on selectively grown GaN channels. The high breakdown field in GaN coupled with the extended region of high velocity at high electric fields makes GaN an ideal material for high microwave power applications. Using AlN as the gate… More

Full Color Monolithic GaN-based LED's

Award Year / Program / Phase: 1997 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: David Kapolnek
Award Amount: $700,000.00
Abstract:
WiTech (WideGap Technology) proposes to develop the monolithic fabrication of full color light emitting diodes (LED) based on group-III nitride materials. The main goal of phase I is the fabrication of super high efficiency LED's and LED arrays on a single chip using band gap engineering of… More

Low Power GaAs Enhancement-Depletion Technology Using Native A1203 as an Insulator

Award Year / Program / Phase: 1997 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Brian Thibeault
Award Amount: $99,998.00
Abstract:
WideGap Technology (WiTech) proposes to develop native oxide based electronics in Gallium Arsenide (GaAs) technology that has the potential of revolutionizing the high speed IC industry. With the proliferation of wireless communications, a huge market has opened up for efficient, low power, high… More

Solar Blind AlGaN Sensors

Award Year / Program / Phase: 1997 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Eric J. Tarsa
Award Amount: $60,286.00
Abstract:
WideGap Technology (WiTech) proposes to develop group-III nitride-based solar blind (

Low Power GaAs Enhancement-Depletion Technology Using Native A1203 as an Insulator

Award Year / Program / Phase: 1998 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Brian Thibeault
Award Amount: $680,000.00
Abstract:
WideGap Technology (WiTech) proposes to develop native oxide based electronics in Gallium Arsenide (GaAs) technology that has the potential of revolutionizing the high speed IC industry. With the proliferation of wireless communications, a huge market has opened up for efficient, low power, high… More

UV Wavelength Selective Quaternary GaN-based Sensors

Award Year / Program / Phase: 1998 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Eric J. Tarsa
Award Amount: $700,000.00
Abstract:
WideGap Technology (WiTech) proposes to develop group-III nitride-based solar blind (

Hybrid Polymer - LED White Light Sources

Award Year / Program / Phase: 1998 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Bernd Keller
Award Amount: $59,890.00
Abstract:
Widegap Technology, LLC (WITECH) proposes to develop a hybrid polymer/LED white lamp which utilizes a blue (450 nm) nitride-based light emitting diode (LED) in combination with a luminescent conjugated polymer to produce white light. The resulting lamp will provide a robust, compact, highly… More

Lateral Epitaxial Overgrowth of GaN for Electronic Devices

Award Year / Program / Phase: 1998 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: David Kapolnek
Award Amount: $59,710.00
Abstract:
WiTech proposes the development of ultra low dislocation density GaN wafers for very high performance electronic device applications using Lateral Epitaxial Overgrowth (LEO) on lattice mismatched sapphire substrates. Dislocations in GaN are ubiquitous, a direct result of the lack of a lattice… More