You are here

Home ยป Company Details

Witech (widegap Technology,

Company Information
Address
5655 Lindero Canyo Road, Suite 404
Westlake Village, CA 91362
United States
Information

UEI: N/A

# of Employees: 10
Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No

Award Charts




Award Listing

  • Record 1 TO 11

  1. Low Power GaAs Enhancement-Depletion Technology Using Native A1203 as an Insulator

    Amount: $680,000.00

    WideGap Technology (WiTech) proposes to develop native oxide based electronics in Gallium Arsenide (GaAs) technology that has the potential of revolutionizing the high speed IC industry. With the pro ...

    SBIRPhase II1998Department of Defense Air Force

  2. UV Wavelength Selective Quaternary GaN-based Sensors

    Amount: $700,000.00

    WideGap Technology (WiTech) proposes to develop group-III nitride-based solar blind (

    SBIRPhase II1998Department of Defense Missile Defense Agency

  3. Hybrid Polymer- LED White Light Sources

    Amount: $59,890.00

    Widegap Technology, LLC (WITECH) proposes to develop a hybrid polymer/LED white lamp which utilizes a blue (450 nm) nitride-based light emitting diode (LED) in combination with a luminescent conjugate ...

    SBIRPhase I1998Department of Defense Missile Defense Agency

  4. Lateral Epitaxial Overgrowth of GaN for Electronic Devices

    Amount: $59,710.00

    WiTech proposes the development of ultra low dislocation density GaN wafers for very high performance electronic device applications using Lateral Epitaxial Overgrowth (LEO) on lattice mismatched sapp ...

    SBIRPhase I1998Department of Defense Missile Defense Agency

  5. GaN Power MISFETs

    Amount: $704,226.00

    WideGap Technology (WiTech) proposes to develop AlN/GaN MISFETs based on selectively grown GaN channels. The high breakdown field in GaN coupled with the extended region of high velocity at high elect ...

    SBIRPhase II1997Department of Defense Missile Defense Agency

  6. Full Color Monolithic GaN-based LED's

    Amount: $700,000.00

    WiTech (WideGap Technology) proposes to develop the monolithic fabrication of full color light emitting diodes (LED) based on group-III nitride materials. The main goal of phase I is the fabrication o ...

    SBIRPhase II1997Department of Defense Missile Defense Agency

  7. Low Power GaAs Enhancement-Depletion Technology Using Native A1203 as an Insulator

    Amount: $99,998.00

    WideGap Technology (WiTech) proposes to develop native oxide based electronics in Gallium Arsenide (GaAs) technology that has the potential of revolutionizing the high speed IC industry. With the pro ...

    SBIRPhase I1997Department of Defense Air Force

  8. Solar Blind AlGaN Sensors

    Amount: $60,286.00

    WideGap Technology (WiTech) proposes to develop group-III nitride-based solar blind (

    SBIRPhase I1997Department of Defense Missile Defense Agency

  9. Ultra Low Phase Noise GaAs MOSFETs

    Amount: $60,000.00

    WideGap Technology (WiTech) proposes to develop a GaAs based MOSFET technology with Al(2)0(3) as the gate insulator and surface passivant. The wet oxide is formed by the steam oxidation of AlAs. Duri ...

    SBIRPhase I1996Department of Defense Missile Defense Agency

  10. Full Color Monolithic GaN-based LED's

    Amount: $60,000.00

    N/A

    SBIRPhase I1996Department of Defense Missile Defense Agency
US Flag An Official Website of the United States Government