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GaN Power MISFETs

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
32059
Program Year/Program:
1997 / SBIR
Agency Tracking Number:
32059
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Witech (widegap Technology,
5655 Lindero Canyo Road, Suite 404 Westlake Village, CA 91362
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1997
Title: GaN Power MISFETs
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $704,226.00
 

Abstract:

WideGap Technology (WiTech) proposes to develop AlN/GaN MISFETs based on selectively grown GaN channels. The high breakdown field in GaN coupled with the extended region of high velocity at high electric fields makes GaN an ideal material for high microwave power applications. Using AlN as the gate insulator suppresses the gate leakage current and eliminates the problem of low schottky barrier height of metals on GaN. Additionally, the selective growth of the FET source and drain access regions reduces the access resistance without reducing the breakdown voltage. This approach also allows us to maintain the gate insulator technology with its associated advantages without compromising series resistances.

Principal Investigator:

David Kapolnek
8059649419

Business Contact:

Small Business Information at Submission:

Witech (widegap Technology)
6266 Marlborough Dr. Goleta, CA 93117

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No