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Ultra Low Phase Noise GaAs MOSFETs

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
32046
Program Year/Program:
1996 / SBIR
Agency Tracking Number:
32046
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Witech (widegap Technology,
5655 Lindero Canyo Road, Suite 404 Westlake Village, CA 91362
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1996
Title: Ultra Low Phase Noise GaAs MOSFETs
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $60,000.00
 

Abstract:

WideGap Technology (WiTech) proposes to develop a GaAs based MOSFET technology with Al(2)0(3) as the gate insulator and surface passivant. The wet oxide is formed by the steam oxidation of AlAs. During phase I we will focus on : Al(2)0(3)/GaAs interface state density reduction, investigate the electrical and thermal stability of Al(2)0(3), and develop the LDD MOSFET technology for low phase noise oscillators. On wafer measurements of phase noise at 4 GHz will be performed. In phase II, the development of hybrid oscillators in microwave fixtures based on the device technology developed in phase I will be pursued. This effort of WiTech leading to the development of GaAs LDD MOSFETs with Al(2)0(3) as the gate oxide can have far reaching consequences in producing low cost ultra low noise oscillators.

Principal Investigator:

Brian Thibeault
8059649419

Business Contact:

Small Business Information at Submission:

Witech (widegap Technology)
6266 Marlborough Dr. Goleta, CA 93117

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No