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Xacton Corp
UEI: N/A
# of Employees: 7
HUBZone Owned: No
Socially and Economically Disadvantaged: Yes
Woman Owned: No
Award Charts
Award Listing
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ADVANCED SYSTEMS AND TECHNOLOGIES FOR FUTURE NAVAL WARFARE: A SURVEILLANCE SENSOR WITHOUT CRYO-COOLERS
Amount: $70,766.00The objective of this work is the development of 3 - 5 micron sensors operating at temperatures from 30C to 70C, for use in Space-Based Surveillance Systems without the use of Cryo-coolers, or uncoole ...
SBIRPhase I1994Department of Defense Navy -
ADVANCED SENSOR TECHNOLOGY FOR FUTURE NAVAL WARFARE: A TWO-COLOR INFRARED SENSOR SYSTEM
Amount: $65,296.00Here we propose the development of a "Two-Color" Integrated Infrared Sensor that will have Military applications in the areas of Surveillance, Target Detection, Acquisition and Tracking, Non-Cooperati ...
SBIRPhase I1993Department of Defense Navy -
MERCURY CADMIUM TELLURIDE SUBSTRATE FOR FOCAL PLANE ARRAYS
Amount: $395,120.00HIGH QUALITY WAFER OF MERCURY CADMIUM TELLURIDE ARE CRITICALLY NEEDED FOR THE FABRICATION OF INFRARED FOCAL PLANE ARRAYS. DEFENSE RELATED APPLICATIONS OF THESE ARRAYS INCLUDE: SURVEILLANCE, TARGET DET ...
SBIRPhase II1992Department of Defense Missile Defense Agency -
CDTE OPTICAL COMPONENTS IN LONG WAVELENGTH INFRARED SYSTEMS
Amount: $66,568.00INFRARED SYSTEMS ARE NEEDED FOR A VARIETY OF DEFENSE RELATED APPLICATIONS, SUCH AS: SURVEILLANCE, TARGET DETECTION, ACQUISITION AND TRACKING, MISSILE GUIDANCE, ETC. FOR MANY APPLICATIONS SUCH AS THOSE ...
SBIRPhase I1991Department of Defense Missile Defense Agency -
MERCURY CADMIUM TELLURIDE FOR LONG WAVELENGTH (15-25 MICRONS) INFRARED SENSOR APPLICATIONS
Amount: $850,000.00N/A
SBIRPhase II1991Department of Defense Missile Defense Agency -
MERCURY CADMIUM TELLURIDE SUBSTRATE FOR FOCAL PLANE ARRAYS
Amount: $64,024.00N/A
SBIRPhase I1991Department of Defense Missile Defense Agency -
GROWTH OF GALLIUM ARSENIDE EPITAXIAL FILMS BY INDIRECT PLASMA ENHANCED LOW PRESSURE METAL ORGANIC CHEMICAL VAPOR DEPOSITION
Amount: $189,446.00THIS PROPOSAL IS AIMED AT TESTING THE FEASIBILITY OF A NEW AND INNOVATIVE IDEA FOR THE PRODUCTION OF LAYERED SEMICONDUCTOR DEVICE STRUCTURES, SUCH AS GALLIUM ARSENIDE-GALLIUM ALUMINUM ARSENIDE. THE EP ...
SBIRPhase II1990Department of Defense Air Force -
TRAVELING HEATER METHOD GROWTH OF BULK COMPOUND SEMICONDUCTOR ALLOY CRYSTALS
Amount: $64,703.00N/A
SBIRPhase I1990Department of Defense Defense Advanced Research Projects Agency -
MERCURY CADMIUM TELLURIDE FOR LONG WAVELENGTH (15-25 MICRONS) INFRARED SENSOR APPLICATIONS
Amount: $64,109.00N/A
SBIRPhase I1990Department of Defense Missile Defense Agency -
GROWTH OF GALLIUM ARSENIDE EPITAXIAL FILMS BY INDIRECT PLASMA ENHANCED LOW PRESSURE METAL ORGANIC CHEMICAL VAPOR DEPOSITION
Amount: $49,868.00N/A
SBIRPhase I1988Department of Defense Air Force