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Xacton Corp

Company Information
Address
P.o. Box 5119
Billerica, MA 01822
United States
Information

UEI: N/A

# of Employees: 7
Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: Yes

Woman Owned: No

Award Charts




Award Listing

  • Record 1 TO 10

  1. ADVANCED SYSTEMS AND TECHNOLOGIES FOR FUTURE NAVAL WARFARE: A SURVEILLANCE SENSOR WITHOUT CRYO-COOLERS

    Amount: $70,766.00

    The objective of this work is the development of 3 - 5 micron sensors operating at temperatures from 30C to 70C, for use in Space-Based Surveillance Systems without the use of Cryo-coolers, or uncoole ...

    SBIRPhase I1994Department of Defense Navy

  2. ADVANCED SENSOR TECHNOLOGY FOR FUTURE NAVAL WARFARE: A TWO-COLOR INFRARED SENSOR SYSTEM

    Amount: $65,296.00

    Here we propose the development of a "Two-Color" Integrated Infrared Sensor that will have Military applications in the areas of Surveillance, Target Detection, Acquisition and Tracking, Non-Cooperati ...

    SBIRPhase I1993Department of Defense Navy

  3. MERCURY CADMIUM TELLURIDE SUBSTRATE FOR FOCAL PLANE ARRAYS

    Amount: $395,120.00

    HIGH QUALITY WAFER OF MERCURY CADMIUM TELLURIDE ARE CRITICALLY NEEDED FOR THE FABRICATION OF INFRARED FOCAL PLANE ARRAYS. DEFENSE RELATED APPLICATIONS OF THESE ARRAYS INCLUDE: SURVEILLANCE, TARGET DET ...

    SBIRPhase II1992Department of Defense Missile Defense Agency

  4. CDTE OPTICAL COMPONENTS IN LONG WAVELENGTH INFRARED SYSTEMS

    Amount: $66,568.00

    INFRARED SYSTEMS ARE NEEDED FOR A VARIETY OF DEFENSE RELATED APPLICATIONS, SUCH AS: SURVEILLANCE, TARGET DETECTION, ACQUISITION AND TRACKING, MISSILE GUIDANCE, ETC. FOR MANY APPLICATIONS SUCH AS THOSE ...

    SBIRPhase I1991Department of Defense Missile Defense Agency

  5. MERCURY CADMIUM TELLURIDE FOR LONG WAVELENGTH (15-25 MICRONS) INFRARED SENSOR APPLICATIONS

    Amount: $850,000.00

    N/A

    SBIRPhase II1991Department of Defense Missile Defense Agency

  6. MERCURY CADMIUM TELLURIDE SUBSTRATE FOR FOCAL PLANE ARRAYS

    Amount: $64,024.00

    N/A

    SBIRPhase I1991Department of Defense Missile Defense Agency

  7. GROWTH OF GALLIUM ARSENIDE EPITAXIAL FILMS BY INDIRECT PLASMA ENHANCED LOW PRESSURE METAL ORGANIC CHEMICAL VAPOR DEPOSITION

    Amount: $189,446.00

    THIS PROPOSAL IS AIMED AT TESTING THE FEASIBILITY OF A NEW AND INNOVATIVE IDEA FOR THE PRODUCTION OF LAYERED SEMICONDUCTOR DEVICE STRUCTURES, SUCH AS GALLIUM ARSENIDE-GALLIUM ALUMINUM ARSENIDE. THE EP ...

    SBIRPhase II1990Department of Defense Air Force

  8. TRAVELING HEATER METHOD GROWTH OF BULK COMPOUND SEMICONDUCTOR ALLOY CRYSTALS

    Amount: $64,703.00

    N/A

    SBIRPhase I1990Department of Defense Defense Advanced Research Projects Agency

  9. MERCURY CADMIUM TELLURIDE FOR LONG WAVELENGTH (15-25 MICRONS) INFRARED SENSOR APPLICATIONS

    Amount: $64,109.00

    N/A

    SBIRPhase I1990Department of Defense Missile Defense Agency

  10. GROWTH OF GALLIUM ARSENIDE EPITAXIAL FILMS BY INDIRECT PLASMA ENHANCED LOW PRESSURE METAL ORGANIC CHEMICAL VAPOR DEPOSITION

    Amount: $49,868.00

    N/A

    SBIRPhase I1988Department of Defense Air Force
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