USA flag logo/image

An Official Website of the United States Government

Company Information:

Company Name: ZN TECHNOLOGY, INC.
City: Brea
State: CA
Zip+4: 92821
Woman-Owned: Yes
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: (714) 989-8814

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $289,995.00 3
SBIR Phase II $729,985.00 1
STTR Phase I $100,000.00 1

Award List:

Zinc Oxide-based Spintronic Devices

Award Year / Program / Phase: 2004 / STTR / Phase I
Agency / Branch: DOD / USAF
Research Institution: RUTGERS UNIV.
Principal Investigator: Gene Cantwell, Chief Scientist
Award Amount: $100,000.00
RI Contact: Yicheng Lu
Abstract:
Zinc oxide is a versatile material, with a wide direct band gap (~3.3eV) with the potential for highly efficient light emitters and detectors, very high radiation hardness, and has high electromechanical coupling coefficients. In addition, transition metal doped ZnO has potential for sprintronics… More

High Efficiency ZnO-Based LEDs on Conductive ZnO Substrates for General Illumination

Award Year / Program / Phase: 2004 / SBIR / Phase I
Agency: DOE
Principal Investigator: Gene Cantwell, Mr.
Award Amount: $100,000.00
Abstract:
76064-General lighting applications use about 22% of total U.S. electric energy production. The potential high efficiency of white light LEDs offers the promise of significantly reducing this energy usage, but first, higher efficiency and lower costs will be required. In this project, high… More

ZnO UV-Blue Light Emitters on High Quality ZnO

Award Year / Program / Phase: 2005 / SBIR / Phase II
Agency / Branch: DOD / ARMY
Principal Investigator: J. J. Song, CEO
Award Amount: $729,985.00
Abstract:
ZnO has many inherent advantages over current materials used to fabricate UV LEDs and lasers. It is a highly efficient light emitter due to the excitonic nature of the emission. The recent development of p-type doping enables many devices to be fabricated based on ZnO. The availability of… More

ZnO UV Light Emitters on High Quality ZnO

Award Year / Program / Phase: 2005 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Gene Cantwell, Chief Scientist
Award Amount: $120,000.00
Abstract:
ZnO has many inherent advantages over current materials used to fabricate UV LEDs and lasers in that it is a more efficient light emitter, has better radiation hardness, and can easily be fabricated in bulk single crystals. Uniquely, this project will utilize the high purity, 2-inch diameter ZnO… More

Zn(Mg,Cd)O Heterostructure Light Emitters

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Jizhi Zhang, Senior Scientist
Award Amount: $69,995.00
Abstract:
Recent developments in p-type doping of ZnO, a wide gap semiconductor with high potential for efficient, UV and visible LEDs and laser diodes, have enabled successful fabrication of ZnO LEDs with emission in the near UV. However, issues of p-type layer quality, reproducibility, and stability have… More