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Zn(Mg,Cd)O Heterostructure Light Emitters

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-10-C-0014
Agency Tracking Number: A092-058-1509
Amount: $69,995.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: A09-058
Solicitation Number: 2009.2
Timeline
Solicitation Year: 2009
Award Year: 2009
Award Start Date (Proposal Award Date): 2009-10-28
Award End Date (Contract End Date): 2010-04-28
Small Business Information
910 Columbia Street
Brea, CA 92821
United States
DUNS: 134392054
HUBZone Owned: No
Woman Owned: Yes
Socially and Economically Disadvantaged: No
Principal Investigator
 Jizhi Zhang
 Senior Scientist
 (714) 989-8880
 jzhang@znt.us
Business Contact
 K. Choo
Title: Vice President
Phone: (714) 989-8814
Email: kchoo@znt.us
Research Institution
N/A
Abstract

Recent developments in p-type doping of ZnO, a wide gap semiconductor with high potential for efficient, UV and visible LEDs and laser diodes, have enabled successful fabrication of ZnO LEDs with emission in the near UV. However, issues of p-type layer quality, reproducibility, and stability have hindered process in improving the LED''s efficiency. In this project, p-type doping processes will be developed that will enable efficiency increases to usable and commercial levels. ZnO-based heterostructures will be developed that will further add to the efficiency improvement and permit tunability over a wide range of the UV, from UVA to UVC, along with the visible range. Bulk ZnO substrates will be enhanced with the addition of Mg to reduce defect levels in the LEDs, improving both their efficiency and lifetime.

* Information listed above is at the time of submission. *

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