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RADIATION HARD SEMICONDUCTOR DEVICES ON ADVANCED SUBSTRATES FOR REENTRY SYSTEM…

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
10292
Program Year/Program:
1989 / SBIR
Agency Tracking Number:
10292
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Technology Applications Gp
351 W Country Hills Dr La Habra, CA 90631
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1989
Title: RADIATION HARD SEMICONDUCTOR DEVICES ON ADVANCED SUBSTRATES FOR REENTRY SYSTEM APPLICATIONS
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $49,949.00
 

Abstract:

THIS R&D PROJECT IS DIRECTED TOWARD THE IDENTIFICATION OF SOI/SIMOX CIRCUIT HARDENING TECHNIQUES FOR REENTRY SYSTEM LINEAR ELECTRONICS. CRITICAL GENERIC LINEAR CIRCUIT FUNCTIONS WILL BE SELECTED FOLLOWING A REVIEW OF PRESENT REENTRY SYSTEM LINEAR REQUIREMENTS. SELECTED CIRCUITS WILL BE DESIGNED USING CMOS/SOI ELECTRICAL AND LAYOUT GROUND RULES. PRELIMINARY LAYOUTS WILL BE PERFORMED TO IDENTIFY GEOMETRIC PARAMETERS. COMPUTER SIMULATIONS OF CIRCUIT RESPONSE TO PERMANENT RADIATION EFFECTS AND PROMPT AND WIDE PULSE IONIZATION WILL BE PERFORMED, HARDNESS LEVELS PREDICTED AND CIRCUIT HARDENING TECHNIQUES EVALUATED. THE PROPOSED APPROACH WILL RESULT IN EXTREME NEUTRON DAMAGE AND SEU AND IONIZING RADIATION UPSET TOLERANCE. TOTAL DOSE HARDNESS WILL BE ADDRESSED BY DESIGN WHILE TAKING ADVANTAGE OF THE RECENT TECHNOLOGY HARDNESS IMPROVEMENTS.

Principal Investigator:

Daryl T Butcher
7148701169

Business Contact:

Small Business Information at Submission:

Technology Applications Gp
351 W Country Hills Dr La Habra, CA 90631

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No