This Phase I SBIR proposes to develop high quantum efficiency (QE) and low dark current infrared epitaxy materials based on Type II Strained Layer Superlattice (SLS) for space-based sensor applications. The epi materials will be grown with Sb-capable multi-wafer production Molecular Beam Epitaxy… More

This Phase II SBIR proposes to develop high quantum efficiency (QE) and low dark current infrared epitaxy materials based on Type II Strained Layer Superlattice (SLS) for space-based sensor applications. The epi materials will be grown with Sb-capable multi-wafer production Molecular Beam Epitaxy… More

IIIV super latticebased detectors incorporating antimony allow highperformance infrared detection in key midwave (5m) to beyond long wave (10m) wavelengths. Overcoming technical challenges related to the epitaxial growth will enable a large cost reduction and performance boost to remote sensing in… More

This Phase I SBIR effort will develop robust and high performance infrared detector technology based on GaSb-based Type II strained-layer superlattices (SLS). The epitaxy development effort will focus on improving QE, reducing dark current, and reducing defects. The device design will be based on… More

This Phase II SBIR effort will develop high performance infrared detector arrays for MDA space applications using advanced barrier structure type-II superlattices based on GaSb. The epitaxy development will increase performance (QE, low dark current) with design iterations of NRL hybrid… More