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Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters

Award Information

National Aeronautics and Space Administration
Award ID:
Program Year/Program:
2011 / SBIR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
Arkansas Power Electronics International
535 W. Research Center Blvd. Fayetteville, AR 72701
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phase 2
Fiscal Year: 2011
Title: Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters
Agency: NASA
Contract: NNX11CA66C
Award Amount: $599,999.00


In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) power supply for the Power Processing Unit (PPU) of Hall Effect thrusters. This program specifically targets the design of a PPU for the HiVHAC (High Voltage Hall ACcelerator) thruster, with target specifications of 80-160V input, 200-700V / 5A output, efficiency greater than 96%, and peak power density in excess of 2.5 kW/kg. The PPU under development utilizes SiC JFET power switches; components which APEI, Inc. has irradiated under TID conditions to greater than 3 MRad with little to zero change in device performance.

Principal Investigator:

Bradley Reese
Principal Investigator

Business Contact:

Sharmila Mounce
Business Official
Small Business Information at Submission:

Arkansas Power Electronics International, Inc.
535 West Research Center Boulevard, Suite 135 Fayetteville, AR 72701-6959

EIN/Tax ID: 710810115
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: Yes