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Low-Noise, UV-to-SWIR Broadband Photodiodes for Large-Format Focal Plane Array…
- Small Business Information
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Woman-Owned: NoMinority-Owned: YesHUBZone-Owned: No
- Phase 2
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Fiscal Year: 2011Title: Low-Noise, UV-to-SWIR Broadband Photodiodes for Large-Format Focal Plane Array SensorsAgency: NASAContract: NNX11CA91CAward Amount: $600,000.00
Abstract:
Broadband focal plane arrays, operating in UV-to-SWIR wavelength range, are required for atmospheric monitoring of greenhouse gases. Currently, separate image sensors are used for different spectral sub-bands: GaN for UV, Si for visible, and InGaAs for SWIR, requiring expensive component-level integration for hyper-spectral imaging. Also, the size of the InGaAs focal plane arrays is currently limited by the InP substrate area.We propose to develop a 640 x 512 UV-to-SWIR focal plane array sensor using GaAs substrate having following photodiode performance: (1) Cut-on Wavelength = 0.25 micron; (2) Cut-off Wavelength = 2.5 micron; (3) RoA > 35 Ohm-cm^2 at 300K; and (4) Quantum Eficiency > 30% in UV (0.25 to 0.4 micron), >80% in Visible (0.4 to 0.9 micron), and > 70% in IR (0.9 to 2.5 micron) subbands. Based on P.I.'s experience on SCIAMACHY, this project will enable one image sensor for 8 spectroscopic channels currently orbiting on European Space Agency's ENVISAT.Small Business Information at Submission:Discovery Semiconductors, Inc.
119 Silvia Street Ewing, NJ 08628-3200EIN/Tax ID: 223140182DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: YesHUBZone-Owned: No
Award Information
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Agency: National Aeronautics and Space Administration |
Branch: N/A |
Award ID: |
Program Year/Program: 2011 / SBIR |
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Agency Tracking Number: 094173 |
Solicitation Year: 2009 |
Solicitation Topic Code: S1.05 |
Solicitation Number: |