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GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
Program Year/Program:
2011 / SBIR
Agency Tracking Number:
094143
Solicitation Year:
2009
Solicitation Topic Code:
O1.07
Solicitation Number:
Small Business Information
The IIIAN Company, LLC
2700 East 28th Street, Suite 120 Minneapolis, MN 55406-1575
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2011
Title: GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions
Agency: NASA
Contract: NNX11CB12C
Award Amount: $600,000.00
 

Abstract:

The innovations proposed here are Ka-band (38 GHz) group III-nitride power FETs and the dislocation density reducing epitaxial growth methods (LPE) needed for their optimal performance and reliability.Ka-band power transistors with >60% Power Added Efficiency (PAE) are not commercially available. The primary limitations to their manufacture are lack of mature process technology at major GaN foundries for sib-100nm lithography necessary for gate definition, and the difficulty of obtaining low dislocation density GaN templates in a suitable wafer size format (3-inch SiC and 6-inch Si) for mass production. Demonstration of Ka-band operation in the group III-nitrides has, to date, been primarily the realm of academic research labs. IIIAN's proposal bridges the gap between commercially available nitride foundry capabilities and pure research by utilizing proven process technology at RFMD for processes not requiring deep, submicron lithography and utilizing state-of-the-art nanofabrication technology available at the University of Minnesota's NanoFabrication Center.

Principal Investigator:

Jody Klaassen
Principal Investigator
6126121249
jklaassen@alum.mit.edu

Business Contact:

Jody Klaassen
Business Official
6126121249
jklaassen@alum.mit.edu
Small Business Information at Submission:

The IIIAN Company, LLC
2700 East 28th Street, Suite 120 Minneapolis, MN 55406-1575

EIN/Tax ID: 262502834
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No