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An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far…

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
Program Year/Program:
2011 / SBIR
Agency Tracking Number:
094683
Solicitation Year:
2009
Solicitation Topic Code:
S1.04
Solicitation Number:
Small Business Information
TechnoScience Corporation
P.O. Box 60658 Palo Alto, CA 94306-0658
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2011
Title: An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far Infrared
Agency: NASA
Contract: NNX11CB18C
Award Amount: $600,000.00
 

Abstract:

We propose to fabricate a germanium blocked-impurity-band (BIB) detector using a novel process which will enable us to:1- fabricate a suitably-doped active layer using the well-established bulk crystal-growth process, which guarantees excellent dopant control and extremely low compensating impurities, and 2- grow the blocking layer using an implant-passivation technique which will produce the required high purity and a very sharp transition from the active to blocking layer. These features are key in design and optimization of the multi-layered structure of BIBs, and their implementation and quality are crucial in optimum operation of these detectors. The proposed process is a drastic departure from conventional epitaxial methods, such as chemical vapor deposition and liquid phase epitaxy, which have yet to produce far IR BIBs suitable for astronomical instruments. Germanium BIBs will offer extended wavelength response up to at least 200µm, high quantum efficiency, high immunity to ionizing radiation, and elimination of long-term transient and memory effects. Coupled with their compatibility with Si cryo-CMOS readout multiplexers and the planar, bump-bond hybridization process, these detectors will make possible the construction of large format, high sensitivity FPAs for far IR astronomyand will replace the current unstressed and stressed germanium detectors.

Principal Investigator:

Jam Farhoomand
Principal Investigator
6506509833
jam.farhoomand@nasa.gov

Business Contact:

Jam Farhoomand
Business Official
6506509833
jam.farhoomand@nasa.gov
Small Business Information at Submission:

TechnoScience Corporation
P.O. Box 60658 Palo Alto, CA 94306-0658

EIN/Tax ID: 770328262
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No