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Inverted 3J Tandem Thermophotovoltaic Modules

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
Program Year/Program:
2011 / SBIR
Agency Tracking Number:
105684
Solicitation Year:
2010
Solicitation Topic Code:
S3.03
Solicitation Number:
Small Business Information
Spire Semiconductor, LLC
25 Sagamore Park Road Hudson, NH 03051-4901
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2011
Title: Inverted 3J Tandem Thermophotovoltaic Modules
Agency: NASA
Contract: NNX11CE10P
Award Amount: $99,486.00
 

Abstract:

Spire Semiconductor proposes to make an InGaAs-based three-junction (3J) tandem thermophotovoltaic (TPV) cell to utilize more of the blackbody spectrum (from a GPHS) efficiently. Semi-insulating InP wafers will be used for monolithically integrated module (MIM)compatibility and to achieve low free-carrier absorption. In Phase 1, we will design, epitaxially grow, and process large area single junction test cells for each of the three bandgaps proposed (to evaluate material quality), as well as for a full tandem cell structure. In Phase 2, we would further refine the structure and incorporate the material into MIM modules.

Principal Investigator:

Steven J. Wojtczuk
Principal Investigator
6036891204
swojtczuk@spiresemi.com

Business Contact:

Edward D. Gagnon
General Manager
6036891226
egagnon@spiresemi.com
Small Business Information at Submission:

Spire Semiconductor, LLC
25 Sagamore Park Road Hudson, NH 03051-4901

EIN/Tax ID: 042457335
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No