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Dry Epitaxial Lift-Off for High Efficiency Solar Cells

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
Program Year/Program:
2011 / SBIR
Agency Tracking Number:
104923
Solicitation Year:
2010
Solicitation Topic Code:
X8.04
Solicitation Number:
Small Business Information
OPTICOMP NETWORKS, INC.
9727 NE Sandy Blvd Room 156 Portland, OR 97220-0000
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2011
Title: Dry Epitaxial Lift-Off for High Efficiency Solar Cells
Agency: NASA
Contract: NNX11CE60P
Award Amount: $100,000.00
 

Abstract:

A new method of transferring epitaxially grown active films onto an inexpensive polymeric flexible carrier. Specifically, for making thin lightweight high efficiency (> 30%) IMM3J solar cells while reusing the GaAs or Ge base wafer. This will reduce the costs of fabricating high efficiency PV cells by 30% and will raise specific power to > 200W/kg. The method uses a thin strained layer under the epitaxially grown active layers without ion implantation or wet etching. A crack propagates in the strained layer splitting the epi-layers from the base wafer after bonding to polyimide wafer, hence dry epitaxial lift-off (DELO), due to the difference in thermal expansion coefficients between the semiconductor and flexible substrate without applying mechanical pressure. The base wafer is re-used to grow new epi-layers.

Principal Investigator:

John Farah
Principal Investigator
4016164176
johnfarah@hotmail.com

Business Contact:

John Farah
Business Official
4016164176
johnfarah@hotmail.com
Small Business Information at Submission:

OptiCOMP Networks
60 Phillips Street, 3-2 Attleboro, MA 02703-6129

EIN/Tax ID: 050512746
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No