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CMOS Compatible SOI MESFETs for Radiation Hardened DC-to-DC Converters
- Small Business Information
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Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 1
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Fiscal Year: 2011Title: CMOS Compatible SOI MESFETs for Radiation Hardened DC-to-DC ConvertersAgency: NASAContract: NNX11CF18PAward Amount: $99,998.00
Abstract:
We have developed a novel metal-semiconductor field-effect-transistor (MESFET) technology suitable for extreme environment electronics. The MESFET technology is fully CMOS-compatible and can be integrated alongside conventional MOSFETs with no changes to the process flow. Unlike the MOSFETs however, the MESFETs do not require a fragile metal-oxide-semiconductor (MOS) interface and are extremely robust. With breakdown voltages in the range 10-50V the MESFET operating voltage greatly exceeds that of the accompanying CMOS. The combination of CMOS compatibility with high breakdown voltage allows for integrated DC-to-DC power conversion solutions that would otherwise require discrete components based on laterally diffused metal-oxide-semiconductor (LDMOS) devices. The MESFETs are intrinsically radiation tolerant up to 1 Mrad(Si) and have been demonstrated to work over the temperature range -196C to +150C. The Phase 1 R & D we are proposing will characterize the large signal switching performance of the SOI MESFETs for buck converter applications in extreme environments.Small Business Information at Submission:Principal Investigator:
William Lepkowski
Principal Investigator
4808168077
w.lepkowski@sjtmicropower.comSJT Micropower
16411 N SKYRIDGE LN FOUNTAIN HILLS, AZ 85268-EIN/Tax ID: 861028814DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
Award Information
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Agency: National Aeronautics and Space Administration |
Branch: N/A |
Award ID: |
Program Year/Program: 2011 / SBIR |
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Agency Tracking Number: 104373 |
Solicitation Year: 2010 |
Solicitation Topic Code: X6.02 |
Solicitation Number: |