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Defect Passivation for High Performance HgCdTe on Si

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
Program Year/Program:
2011 / STTR
Agency Tracking Number:
B11A-002-0004
Solicitation Year:
2011
Solicitation Topic Code:
MDA11-T002
Solicitation Number:
2011.A
Small Business Information
EPIR Technologies Inc
590 Territorial Drive, Suite B Bolingbrook, IL -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2011
Title: Defect Passivation for High Performance HgCdTe on Si
Agency / Branch: DOD / MDA
Contract: HQ0147-11-C-7669
Award Amount: $149,962.00
 

Abstract:

Hydrogen isotopes have been shown to reduce the electrical effects of various semiconductor defects. Specifically, monoatomic hydrogen and deuterium passivate the electrical activity of defects such as dislocations in long-wavelength HgCdTe grown on Si. We propose a novel method of controlling the intake of hydrogen in HgCdTe IRFPAs by using the H2/He plasma afterglow formed by flowing plasma-generated species outside the discharge area. The reduced reactivity of the afterglow plasma will maintain the IRFPA integrity while a nozzle specially designed to generate a supersonic flow and used to extract the hydrogen species increases the static pressure and axial velocity, thereby enhancing the uptake of passivants.

Principal Investigator:

Paul Boieriu
Director of Operations
(630) 771-0203
contracts@epir.com

Business Contact:

Sivalingam Sivananthan
Chief Executive Officer
(630) 771-0201
ssivananthan@epir.com
Small Business Information at Submission:

EPIR Technologies Inc
590 Territorial Drive, Suite B Bolingbrook, IL -

EIN/Tax ID: 364196918
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
University of Illinois Chicago
Office of Research Services
1737 W. Polk St., Rm. 304
Chicago, IL 60612-7227
Contact: Luis R. Vargas
Contact Phone: (312) 996-9406