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Defect Passivation for High Performance HgCdTe on Si
- Small Business Information
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Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 1
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Fiscal Year: 2011Title: Defect Passivation for High Performance HgCdTe on SiAgency / Branch: DOD / MDAContract: HQ0147-11-C-7669Award Amount: $149,962.00
Abstract:
Hydrogen isotopes have been shown to reduce the electrical effects of various semiconductor defects. Specifically, monoatomic hydrogen and deuterium passivate the electrical activity of defects such as dislocations in long-wavelength HgCdTe grown on Si. We propose a novel method of controlling the intake of hydrogen in HgCdTe IRFPAs by using the H2/He plasma afterglow formed by flowing plasma-generated species outside the discharge area. The reduced reactivity of the afterglow plasma will maintain the IRFPA integrity while a nozzle specially designed to generate a supersonic flow and used to extract the hydrogen species increases the static pressure and axial velocity, thereby enhancing the uptake of passivants.Small Business Information at Submission:Research Institution Information:EPIR Technologies Inc
590 Territorial Drive, Suite B Bolingbrook, IL -EIN/Tax ID: 364196918DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: NoUniversity of Illinois Chicago
Office of Research Services
1737 W. Polk St., Rm. 304
Chicago, IL 60612-7227Contact: Luis R. VargasContact Phone: (312) 996-9406
Award Information
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Agency: Department of Defense |
Branch: Missile Defense Agency |
Award ID: |
Program Year/Program: 2011 / STTR |
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Agency Tracking Number: B11A-002-0004 |
Solicitation Year: 2011 |
Solicitation Topic Code: MDA11-T002 |
Solicitation Number: 2011.A |