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High Power, Highly Linear Photodiode Arrays with Integrated RF Power Combiner…
- Small Business Information
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Woman-Owned: NoMinority-Owned: YesHUBZone-Owned: No
- Phase 1
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Fiscal Year: 2010Title: High Power, Highly Linear Photodiode Arrays with Integrated RF Power Combiner for 2 - 20 GHz ApplicationsAgency / Branch: DOD / DARPAContract: N10PC20188Award Amount: $98,955.00
Abstract:
We propose to develop high-power, highly linear photodiodes having the following specifications at 1550 nm wavelength per photodiode: (1) 3 dB bandwidth > 20 GHz, (2) DC photocurrent > 200 mA, (3) maximum RF output power > 1 W, (4) two-tone OIP3 > 55 dBm, and (5) power-to-phase conversion factor < 3 rad/W. In conjunction with the significant advances in the state-of-the-art in individual photodiode performance, as mentioned above, we will demonstrate further ~ 6 dB enhancement in maximum RF output power and OIP3 by combining the RF outputs of an array of the proposed photodiodes with a RF Wilkinson combiner.Small Business Information at Submission:Discovery Semiconductors, Inc.
119 Silvia Street Ewing, NJ 08628EIN/Tax ID: 223140182DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
Award Information
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Agency: Department of Defense |
Branch: Defense Advanced Research Projects Agency |
Award ID: 96750 |
Program Year/Program: 2010 / SBIR |
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Agency Tracking Number: 10SB1-0290 |
Solicitation Year: N/A |
Solicitation Topic Code: DARPA 10-008 |
Solicitation Number: N/A |