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High Power, Highly Linear Photodiode Arrays with Integrated RF Power Combiner…

Award Information

Department of Defense
Defense Advanced Research Projects Agency
Award ID:
Program Year/Program:
2010 / SBIR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
DARPA 10-008
Solicitation Number:
Small Business Information
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
Phase 1
Fiscal Year: 2010
Title: High Power, Highly Linear Photodiode Arrays with Integrated RF Power Combiner for 2 - 20 GHz Applications
Agency / Branch: DOD / DARPA
Contract: N10PC20188
Award Amount: $98,955.00


We propose to develop high-power, highly linear photodiodes having the following specifications at 1550 nm wavelength per photodiode: (1) 3 dB bandwidth > 20 GHz, (2) DC photocurrent > 200 mA, (3) maximum RF output power > 1 W, (4) two-tone OIP3 > 55 dBm, and (5) power-to-phase conversion factor < 3 rad/W. In conjunction with the significant advances in the state-of-the-art in individual photodiode performance, as mentioned above, we will demonstrate further ~ 6 dB enhancement in maximum RF output power and OIP3 by combining the RF outputs of an array of the proposed photodiodes with a RF Wilkinson combiner.

Principal Investigator:

Abhay Joshi
President and CEO

Business Contact:

Abhay Joshi
President and CEO
Small Business Information at Submission:

Discovery Semiconductors, Inc.
119 Silvia Street Ewing, NJ 08628

EIN/Tax ID: 223140182
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No