USA flag logo/image

An Official Website of the United States Government

Development of III-Nitride Based 280 nm Lasers

Award Information

Department of Defense
Award ID:
Program Year/Program:
2011 / SBIR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
MP Technologies, LLC
1500 Sheridan RD, SUITE 8A Wilmette, IL -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phase 1
Fiscal Year: 2011
Title: Development of III-Nitride Based 280 nm Lasers
Agency: DOD
Contract: N68335-11-C-0308
Award Amount: $79,560.00


Unfortunately, existing AlGaN based ultraviolet laser diodes with wavelengths much shorter than 340 nm suffer from poor performance. This is partially due to the fact that most of the existing research has focused on growth of InGaN lasers on GaN based templates, but a large part is also due to material and processing issues unique to deep UV lasers. New approaches to achieving III-Nitride 280 nm lasers are needed to meets the Navy"s ambitious goals laid out in this program; it is unlikely that traditional approaches to III-Nitrides will be able to achieve the desired laser performance. Instead it is necessary to develop revolutionarily novel approaches to the growth and fabrication of AlInGaN based UV lasers. To this end, we propose a novel hybrid n-ZnO/AlGaN/p-Si 280 nm UV laser. The objective of this Phase I proposal is to investigate novel techniques required to achieve such a hybrid laser. This objective will be complemented by scientific studies to better understand the physical origins existing performance limitations.

Principal Investigator:

Ryan McClintock
Technical Director
(847) 491-7208

Business Contact:

Manijeh Razeghi
(847) 491-7208
Small Business Information at Submission:

MP Technologies, LLC
1801 Maple Avenue Evanston, IL -

EIN/Tax ID: 364280738
Number of Employees:
Woman-Owned: Yes
Minority-Owned: No
HUBZone-Owned: No