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AlInN-GaN High Voltage Enhancement Mode HEMT for Power Converters-Inverters
- Small Business Information
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Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 2
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Fiscal Year: 2011Title: AlInN-GaN High Voltage Enhancement Mode HEMT for Power Converters-InvertersAgency: DODContract: HQ0147-11-C-7266Award Amount: $999,973.00
Abstract:
The goal of the Phase II program is to fabricate high voltage high power converter/inverters for high frequency/high temperature operation using enhancement mode-depletion mode insulating ate AlInN-GaN/i-SiC transistor building blocks. Our technical approach is to use lattice matched AlInN-GaN epilayers in conjunction with a field-plated insulating gate HEMT device design and a fluorine treatment to accomplish the goal. We believe that the combination of lattice matched AlInN field-plated HEMTs, a unique pulsed PECVD insulator deposition and the use of a controlled fluorine treatment should overcome the issues currently faced by the AlGaN-GaN based technology. The suitability of our devices for military and commercial applications will be established via a joint processing and device testing program. In the Phase III program we will develop a large volume manufacturing technology for epitaxial wafers and devices for supply to DOD and commercial outfits in a strategic partnership with a large company.Small Business Information at Submission:Nitek Inc
1804 Salem Church Road Irmo, SC -EIN/Tax ID: 208394864DUNS: N/ANumber of Employees:Woman-Owned: YesMinority-Owned: NoHUBZone-Owned: No
Award Information
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Agency: Department of Defense |
Branch: N/A |
Award ID: |
Program Year/Program: 2011 / SBIR |
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Agency Tracking Number: B2-1660 |
Solicitation Year: 2008 |
Solicitation Topic Code: MDA08-029 |
Solicitation Number: 2008.3 |