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AlInN-GaN High Voltage Enhancement Mode HEMT for Power Converters-Inverters

Award Information

Agency:
Department of Defense
Branch:
N/A
Award ID:
Program Year/Program:
2011 / SBIR
Agency Tracking Number:
B2-1660
Solicitation Year:
2008
Solicitation Topic Code:
MDA08-029
Solicitation Number:
2008.3
Small Business Information
NITEK, INC.
1804 Salem Church Road Irmo, SC -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2011
Title: AlInN-GaN High Voltage Enhancement Mode HEMT for Power Converters-Inverters
Agency: DOD
Contract: HQ0147-11-C-7266
Award Amount: $999,973.00
 

Abstract:

The goal of the Phase II program is to fabricate high voltage high power converter/inverters for high frequency/high temperature operation using enhancement mode-depletion mode insulating ate AlInN-GaN/i-SiC transistor building blocks. Our technical approach is to use lattice matched AlInN-GaN epilayers in conjunction with a field-plated insulating gate HEMT device design and a fluorine treatment to accomplish the goal. We believe that the combination of lattice matched AlInN field-plated HEMTs, a unique pulsed PECVD insulator deposition and the use of a controlled fluorine treatment should overcome the issues currently faced by the AlGaN-GaN based technology. The suitability of our devices for military and commercial applications will be established via a joint processing and device testing program. In the Phase III program we will develop a large volume manufacturing technology for epitaxial wafers and devices for supply to DOD and commercial outfits in a strategic partnership with a large company.

Principal Investigator:

Vinod Adivarahan
Principal Investigator
(877) 230-5338
vinod@nitekusa.com

Business Contact:

Rubina Khan
CEO and President
(877) 230-5338
ruby@nitekusa.com
Small Business Information at Submission:

Nitek Inc
1804 Salem Church Road Irmo, SC -

EIN/Tax ID: 208394864
DUNS: N/A
Number of Employees:
Woman-Owned: Yes
Minority-Owned: No
HUBZone-Owned: No