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High Performance InAs and InN Semiconductor Gas Sensors

Award Information

Department of Defense
Award ID:
Program Year/Program:
2012 / STTR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phase 1
Fiscal Year: 2012
Title: High Performance InAs and InN Semiconductor Gas Sensors
Agency / Branch: DOD / ARMY
Contract: W911NF-12-C-0077
Award Amount: $100,000.00


In this STTR program, Structured Materials Industries, Inc. (SMI) and partners will develop low-cost, planar gas sensors, with high sensitivity and high selectivity. Gas sensors are critical to many existing and emerging applications in defense and homeland security. Present technology gas sensors based on metal oxide films do not have the required sensitivity or selectivity. The technical approach of this STTR effort is based on thin films of the III-V compound semiconductors indium arsenide (InAs) and indium nitride (InN). InAs and InN are unique semiconductor materials with a high surface accumulation of electrons. Therefore, the conductivity of these materials can be extremely sensitive to adsorbed species. Surface functionalization layers can also be designed and added to these gas sensors, to impart high selectivity to specific analytes.

Principal Investigator:

Nick M. Sbrockey
Principal Scientist
(732) 302-9274

Business Contact:

Gary S. Tompa
(732) 302-9274
Small Business Information at Submission:

Structured Materials Industries
201 Circle Drive North Unit # 102 Piscataway, NJ -

EIN/Tax ID: 223175106
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
University of South Carolina
901 Sumter Street
Suite 510
Columbia, SC 29208-
Contact: R. S. Etheredge
Contact Phone: (803) 777-4457