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HOVPE Growth of High Quality AlGaN on AlN substrates

Award Information

Department of Defense
Award ID:
Program Year/Program:
2012 / STTR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phase 1
Fiscal Year: 2012
Title: HOVPE Growth of High Quality AlGaN on AlN substrates
Agency / Branch: DOD / ARMY
Contract: W911NF-12-C-0082
Award Amount: $100,000.00


In this STTR program, Structured Materials Industries, Inc. (SMI) along with the Electro Optics Center - Pennsylvania State University will apply its hybrid Hydride Metal-Organic Vapor Phase Epitaxy (HOVPE) based growth methods to produce optimum quality AlxGa1-xN on AlN substrates. The Phase I goal is to convincingly demonstrate the advantages of the HOVPE technique to produce high quality, epitaxial AlGaN material, with a concentration on decreased dislocation density. Successful conclusion of this work will produce device quality AlGaN layers for high electron mobility transistors, high power electronics and optical components.

Principal Investigator:

Nick M. Sbrockey
Principal Scientist
(732) 302-9274

Business Contact:

Gary S. Tompa
(732) 302-9274
Small Business Information at Submission:

Structured Materials Industries
201 Circle Drive North Unit # 102 Piscataway, NJ -

EIN/Tax ID: 223175106
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
Penn State University
222 Northpointe Boulevard
Freeport, PA 16229-
Contact: Kevin White
Contact Phone: (724) 295-7000