High-Power, Continuous-Wave 3.0- to 3.5-Micron Emitting Quantum Cascade Semiconductor Laser
Agency / Branch:
DOD / NAVY
The technical objectives of this proposal are: 1) the design of 3.0-3.5 micron-emitting quantum cascade laser (QCL) structures grown on metamorphic-buffer-layer (MBL) substrates; 2) the realization of electroluminescent QCL structures on MBLs with emission in the 3.0-3.5-micron wavelength range. Novel tapered active-region (TA) QCLs will be designed to substantially suppress carrier leakage out of their active regions, in order to achieve electro-optic characteristics of low temperature sensitivity. Novel MBL-based approaches will be used for realizing low layer-strain levels for the structure of 3.0-3.5 micron-emitting intersubband-transition semiconductor sources. The design will be for QCLs able to achieve CW operation to at least 0.5 W at room temperature and with high beam quality. A development plan describing monolithic coherent-beam combining of TA QCLs for scaling the spatially coherent CW power to at least 5-10 W levels will be devised.
Small Business Information at Submission:
Research Institution Information:
200 N. Prospect Ave. Madison, WI 53726-
Number of Employees:
University of Wisconsin-Madison
21 N. Park St.
Madison, WI 53715-1218