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Monolithically integrated AlN/GaN electronics for harsh environments

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
Program Year/Program:
2012 / SBIR
Agency Tracking Number:
115561
Solicitation Year:
2011
Solicitation Topic Code:
S5.05
Solicitation Number:
Small Business Information
SVT Associates, Inc.
7620 Executive Drive Eden Prairie, MN 55344-3677
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2012
Title: Monolithically integrated AlN/GaN electronics for harsh environments
Agency: NASA
Contract: NNX12CE68P
Award Amount: $96,891.00
 

Abstract:

Recently, resonant-tunneling-diode (RTD) based circuits employing monolithically-integrated RTD on high electron mobility (HEMT) structures have been developed in a number of III-V systems in order to improve operational speed. The main goal of this program is to develop wide temperature-operable radiation hard monolithically-integrated electronics based on wide bandgap III-nitride epitaxial structures. In the Phase I program, we propose to develop same-wafer discrete devices (capacitors, HEMTs, and RTDs) by employing a novel multi-layer AlN/GaN heterostructure design, and to demonstrate the radiation hardness of these devices

Principal Investigator:

David Deen
Principal Investigator
9529342100
deen@svta.com

Business Contact:

Leslie A. Price
Contract Administrator
9529342100
price@svta.com
Small Business Information at Submission:

SVT Associates
7620 Executive Drive Eden Prairie, MN 55344-3677

EIN/Tax ID: 411764876
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No