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The Characterization and Mitigation of Radiation Effects on Nano-technology…

Award Information

Agency:
Department of Defense
Branch:
N/A
Award ID:
Program Year/Program:
2012 / SBIR
Agency Tracking Number:
T121--02-0023
Solicitation Year:
2012
Solicitation Topic Code:
DTRA121-002
Solicitation Number:
2012.1
Small Business Information
Defense Electronics Corporation
3690 70th Avenue North Pinellas Park, FL -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2012
Title: The Characterization and Mitigation of Radiation Effects on Nano-technology Microelectronics
Agency: DOD
Contract: HDTRA1-12-P-0042
Award Amount: $149,918.00
 

Abstract:

Defense Electronics Corporation (DEC) proposes an innovative radiation hardened by design (RHBD) and reliability improvement solution for silicon, III-V compounds (e.g. SiGe, SiC, GaN, InP, GaAs,), carbon nanotubes (CNT), and graphene. The method is based on analyzing chip-partitioned quiescent current signatures associated with failure modes common to these process technologies. Furthermore, the method leverages unique process properties for a novel recovery architecture. Quiescent current and chip level integrated recovery (CLIR) satisfy defect detection and diagnosis, fault analysis and/or fault propagation, and recovery. This method is designed to work efficiently in a radiation environment, although it is designed to work equally well with process technologies exhibiting failure modes unrelated to radiation. This method is similar to Concurrent Error Detection (CED) but possesses very distinct differences. In addition, the CLIR technique can be configured to detect IDDQ current signatures related to total ionizing dose (TID) as well as single event upsets (SEU). Candidate architectures include analog, digital, mixed signal, high power and radio frequency (RF) designs. Built In Current Sensor (BICS) and CLIR techniques for a RHBD solution mitigate radiation effects in scaled processes using SiGe, SiC, GaN, InP, GaAs, carbon nanotubes, and graphene.

Principal Investigator:

Stephan Athan
Chief Engineer
(727) 547-9799
sathan@defense-elec-corp.com

Business Contact:

Nancy Crews
President
(727) 547-9799
ncrews@defense-elec-corp.com
Small Business Information at Submission:

Defense Electronics Corporation
3690 70th Avenue North Pinellas Park, FL -

EIN/Tax ID: 203987048
DUNS: N/A
Number of Employees:
Woman-Owned: Yes
Minority-Owned: No
HUBZone-Owned: No