Unipolar nBn HgCdTe on Silicon for High Performance, Low Cost NIR/SWIR Imagers
We propose the development of a near infrared/shortwave infrared (NIR/SWIR) sensor based on mercury cadmium telluride (HgCdTe) in an n-type/barrier/n-type (nBn) architecture, designed for room-temperature operation in the 0.7 to 2.8µm NIR/SWIR spectral range. The sensor will compete as a low cost/high performance alternative to near infrared indium gallium arsenide (InGaAs)-based cameras by providing reduced fabrication costs and an extended detection wavelength range. The detectors will be composed of n-type and undoped HgCdTe material, which simplifies the manufacturing and lowers costs by eliminating the complications associated with p-type doping. This Phase I proposed effort will fabricate a prototype nBn HgCdTe NIR/SWIR sensors on silicon substrates with room-temperature spectral response from the silicon absorption band edge (~1.1µm) to 2.8µm. In Phase II, the nBn devices will be incorporated in high-resolution FPAs, and, with substrate removal, have responsivity from 0.7µm to 2.8µm. In the nBn architecture, HgCdTe has tremendous potential for advanced NIR/SWIR imaging applications that can realize an"out-of-band"capability advantage over InGaAs detectors while maintaining cost competitiveness because of the simplified processing of nBn devices as well as the low cost and large format of Si substrates.
Small Business Information at Submission:
EPIR Technologies Inc
590 Territorial Drive, Suite B Bolingbrook, IL -
Number of Employees: