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Silicon Carbide Device Model Development for Circuit Simulations

Award Information

Agency:
Department of Defense
Branch:
N/A
Award ID:
Program Year/Program:
2012 / SBIR
Agency Tracking Number:
O113-EP1-2045
Solicitation Year:
2011
Solicitation Topic Code:
OSD11-EP1
Solicitation Number:
2011.3
Small Business Information
United Silicon Carbide, Inc
7 Deer Park Drive, Suite E Monmouth Junction, NJ -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2012
Title: Silicon Carbide Device Model Development for Circuit Simulations
Agency: DOD
Contract: W911QX-12-C-0041
Award Amount: $149,658.00
 

Abstract:

During this program, United Silicon Carbide, Inc. (USCi) will develop compact SiC power device models, prepare them for industry acceptance, and gain support of the models from commercial simulator suppliers. In Phase I, we propose to develop an initial compact circuit model for a 4H-SiC power MOSFET that will accurately describe device performance in the temperature range from -40 degrees C to 250 degrees C. The model will be based on a standard SPICE MOSFET model that will be expanded to include parameters reflecting the SiC device physics, thus allowing more accurate and robust electrical representation of the device in circuit simulation. In Phase II, we will fully develop the Phase I model to include electrical, thermal, mechanical, and material parameters that will allow 4H-SiC power MOSFETs to be used in system level modeling applications. We will also develop similar models for JFETs and Schottky diodes to be able to model different power system topologies. In Phase III, we will provide models commercially and achieve industry adoption through industry standards organizations (Compact Model Council and Global Semiconductor Alliance) and collaboration with commercial system vendors.

Principal Investigator:

Petre Alexandrov
Senior Research Engineer
(732) 355-0550
palexandrov@unitedsic.com

Business Contact:

J. C. Dries
President&CEO
(732) 355-0550
jcdries@unitedsic.com
Small Business Information at Submission:

United Silicon Carbide, Inc
7 Deer Park Drive, Suite E Monmouth Junction, NJ -

EIN/Tax ID: 271055700
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No