A Scheme to Reduce Dark Current in SLS FPAs
Longwave infrared focal plane arrays (FPAs) based on Type-II InAs/GaSb-based strained layer superlattice (SLS) photodiodes show good performance at the current time. A key remaining challenge is the reduction of dark current, dominated by pixel surface leakage in FPAs and low minority carrier lifetime in the bulk material. We propose to address the former in this Phase I and develop a unique scheme to reduce dark current in small pixels by a factor of 10x, approaching bulk leakage values. In Phase II, we will apply the technique to make very large format FPAs.
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