Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates
Phase I objective is to demonstrate the feasibility of our approach to reduce the dislocation density to below 1E5 cm-2 in LWIR HgCdTe epitaxial layers grown on Si substrates. Phase II objective is to demonstrate dislocation density to below 1E5 cm-2 reproducibly in LWIR HgCdTe epitaxial layers grown on 3 inch diameter Si substrates and to demonstrate high performance LWIR focal plane arrays in 2Kx2K or larger formats.
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