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High Speed and Low Operating Voltage Laser Q-Switch

Award Information

Department of Defense
Award ID:
Program Year/Program:
2012 / SBIR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
AGILTRON Corporation
MA Woburn, MA 01801-1040
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phase 1
Fiscal Year: 2012
Title: High Speed and Low Operating Voltage Laser Q-Switch
Agency: DOD
Contract: W909MY-12-C-0018
Award Amount: $88,722.00


A laser Q-Switch with a low drive voltage and low insertion loss is needed. Today"s electro-optic crystal Q-switch requires high voltage, and the saturable absorber passive Q-switch introduces significant losses in the cavity. Agiltron, Inc., an experienced manufacturer of MEMS chips and MEMS based optical switches, proposes to develop a new MEMS-based laser Q-switch which is compact, ruggedized and only needs less than 200 V drive voltage. The design will be the first MEMS laser Q- switch optimized specifically to meet the requirements for use in designation, marking, and range-finding, and will possess properties of reliability, miniature size, low optical loss, and resistance to shock and can work over a temperature range of -40 to +60 degrees Celsius. Three advances in Agiltron switch technology will be combined to achieve these goals, including a new MEMS actuation mechanism, vast experience in laser systems, and qualified packaging. The MEMS Q-switch will be modeled and fabricated in Phase I. And 20 optimized Q-switch modulators will be built and delivered in Phase II.

Principal Investigator:

Steve Wu
Senior Scientist
(781) 935-1200

Business Contact:

Amanda Contardo
Contracts Administrator
(781) 935-1200
Small Business Information at Submission:

Agiltron Corporation
15 Presidential Way Wo, MA -

EIN/Tax ID: 043539587
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No