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Atomic Layer Deposition Technology for Gallium Nitride Microwave Monolithic Integrated Circuits
Award Information
Agency: Department of Defense
Branch: Navy
Contract: M67854-12-C-6544
Agency Tracking Number: N121-001-0874
Amount:
$149,808.00
Phase:
Phase I
Program:
SBIR
Solicitation Topic Code:
N121-001
Solicitation Number:
2012.1
Timeline
Solicitation Year:
2012
Award Year:
2012
Award Start Date (Proposal Award Date):
2012-05-01
Award End Date (Contract End Date):
2013-05-31
Small Business Information
3400 Industrial Lane
Unit 7
Broomfield, CO
-
United States
DUNS:
100363857
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Ofer Sneh
Title: Director of Technology
Phone: (303) 466-2341
Email: ofer@sundewtech.com
Title: Director of Technology
Phone: (303) 466-2341
Email: ofer@sundewtech.com
Business Contact
Name: Anat Sneh
Title: Vice President
Phone: (303) 466-2341
Email: anat@sundewtech.com
Title: Vice President
Phone: (303) 466-2341
Email: anat@sundewtech.com
Research Institution
Name: Stub
Abstract
This Phase I proposal targets the development of commercially viable silicon-nitride (SiN) Atomic Layer Deposition (ALD) process for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, this project objective is to provide a higher quality substitution for SiN passivation layers, currently grown by Plasma Enhanced Chemical Vapor Deposition (PECVD). These better passivation layers will enable the development and manufacturing of GaN MMICs with ground-breaking impact on performance, power efficiency, size and cost of many military systems and commercial products.
* Information listed above is at the time of submission. *
