USA flag logo/image

An Official Website of the United States Government

Atomic Layer Deposition Technology for Gallium Nitride Microwave Monolithic…

Award Information

Agency:
Department of Defense
Branch:
Navy
Award ID:
Program Year/Program:
2012 / SBIR
Agency Tracking Number:
N121-001-0874
Solicitation Year:
2012
Solicitation Topic Code:
N121-001
Solicitation Number:
2012.1
Small Business Information
Sundew Technologies, LLC
3400 Industrial Lane Unit 7 Broomfield, CO 80020-
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2012
Title: Atomic Layer Deposition Technology for Gallium Nitride Microwave Monolithic Integrated Circuits
Agency / Branch: DOD / NAVY
Contract: M67854-12-C-6544
Award Amount: $149,808.00
 

Abstract:

This Phase I proposal targets the development of commercially viable silicon-nitride (SiN) Atomic Layer Deposition (ALD) process for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, this project objective is to provide a higher quality substitution for SiN passivation layers, currently grown by Plasma Enhanced Chemical Vapor Deposition (PECVD). These better passivation layers will enable the development and manufacturing of GaN MMICs with ground-breaking impact on performance, power efficiency, size and cost of many military systems and commercial products.

Principal Investigator:

Ofer Sneh
Director of Technology
(303) 466-2341
ofer@sundewtech.com

Business Contact:

Anat Sneh
Vice President
(303) 466-2341
anat@sundewtech.com
Small Business Information at Submission:

Sundew Technologies, LLC
3400 Industrial Lane Unit 7 Broomfield, CO -

EIN/Tax ID: 841612757
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No