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Planar, Low Switching Loss Bulk InAlN/GaN Based HEMTS for Power Conversion…

Award Information

Department of Defense
Award ID:
Program Year/Program:
2012 / SBIR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
Kyma Technologies
8829 Midway West Road Raleigh, NC 27617-
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phase 1
Fiscal Year: 2012
Title: Planar, Low Switching Loss Bulk InAlN/GaN Based HEMTS for Power Conversion Applications
Agency: DOD
Contract: N00014-12-M-0180
Award Amount: $80,000.00


In this proposal, we build on demonstrated expertise in Bulk GaN growth (Kyma Technologies), Design and simulation of Power Devices and systems (NextWatt LLC), Epitaxial Growth of High Performance HEMT heterostructures (Virginia Commonwealth University), and Fabrication of Advanced Semiconductor Devices (The Pennsylvania State University). The effort aims to develop a high power normally-off HEMT based on InAlN/GaN epilayers grown on bulk GaN substrates. The work naturally stems from proven efforts in the realm of high performance RF FETs already developed by prior and ongoing collaborations within the team. This effort will build on the high quality materials and advanced device performances already demonstrated from previous works and apply them for use in power HEMT devices. The unique capabilities of the team and existing collaborative efforts make the team well positioned to successfully achieve normally-off high power switching HEMTs with VT>1V, VBR>1000V, RON<20-mm and low gate and drain leakage values of<1A/mm.

Principal Investigator:

Jacob Leach
Director of Production
(919) 789-8880

Business Contact:

Heather Splawn
(919) 789-8880
Small Business Information at Submission:

Kyma Technologies, Inc.
8829 Midway West Road Raleigh, NC -

EIN/Tax ID: 562089207
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No