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Planar, Low Switching Loss Bulk InAlN/GaN Based HEMTS for Power Conversion Applications

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00014-12-M-0180
Agency Tracking Number: N121-090-0808
Amount: $80,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N121-090
Solicitation Number: 2012.1
Timeline
Solicitation Year: 2012
Award Year: 2012
Award Start Date (Proposal Award Date): 2012-05-07
Award End Date (Contract End Date): N/A
Small Business Information
8829 Midway West Road
Raleigh, NC -
United States
DUNS: 020080607
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Jacob Leach
 Director of Production
 (919) 789-8880
 leach@kymatech.com
Business Contact
 Heather Splawn
Title: COO
Phone: (919) 789-8880
Email: contracts@kymatech.com
Research Institution
 Stub
Abstract

In this proposal, we build on demonstrated expertise in Bulk GaN growth (Kyma Technologies), Design and simulation of Power Devices and systems (NextWatt LLC), Epitaxial Growth of High Performance HEMT heterostructures (Virginia Commonwealth University), and Fabrication of Advanced Semiconductor Devices (The Pennsylvania State University). The effort aims to develop a high power normally-off HEMT based on InAlN/GaN epilayers grown on bulk GaN substrates. The work naturally stems from proven efforts in the realm of high performance RF FETs already developed by prior and ongoing collaborations within the team. This effort will build on the high quality materials and advanced device performances already demonstrated from previous works and apply them for use in power HEMT devices. The unique capabilities of the team and existing collaborative efforts make the team well positioned to successfully achieve normally-off high power switching HEMTs with VT>1V, VBR>1000V, RON<20-mm and low gate and drain leakage values of<1A/mm.

* Information listed above is at the time of submission. *

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