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Radiation-Hardened, Resistive Random Access Memory

Award Information

Agency:
Department of Defense
Branch:
N/A
Award ID:
Program Year/Program:
2012 / SBIR
Agency Tracking Number:
F103-093-1784
Solicitation Year:
2010
Solicitation Topic Code:
AF103-093
Solicitation Number:
2010.3
Small Business Information
Tezzaron Semiconductor Corp.
1415 Bond St. #111 Naperville, IL 60563-
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2012
Title: Radiation-Hardened, Resistive Random Access Memory
Agency: DOD
Contract: FA9453-12-C-0113
Award Amount: $749,919.00
 

Abstract:

ABSTRACT: Tezzaron proposes to develop and demonstrate a 64Mb 3D integrated MRAM device comprising one non-volatile memory cell layer and one radiation hardened I/O logic and control layer. This memory device will address the industry"s next generation needs for nonvolatile memory density and also, because of its virtually unlimited wearout lifetime, act as next main memory, reducing overall component count, size, weight and power. The device will have the capacity for expansion up to 1Gb with the addition of more memory cell layers. This program will ultimately produce components for use in space-based systems as well as other DoD systems. BENEFIT: The proposed device significantly increases the density of aerospace/space/military hardened non-volatile memory. The MRAM memory device at the new propose range of device capacities to 1Gb would also allow consolidation of the volatile and non-volatile memories reducing board space and power. This provides fundementally increased computing capability for space applications.

Principal Investigator:

Robert Patti
CTO
(630) 505-0404
rpatti@tezzaron.com

Business Contact:

Robert Patti
CTO
(630) 505-0404
rpatti@tezzaron.com
Small Business Information at Submission:

Tezzaron Semiconductor Corp.
1415 Bond St. #111 Naperville, IL -

EIN/Tax ID: 841512428
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No