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High Temperature Silicon Carbide (SiC) Gate Driver

Award Information

Agency:
Department of Defense
Branch:
N/A
Award ID:
Program Year/Program:
2012 / SBIR
Agency Tracking Number:
A2-4820
Solicitation Year:
2010
Solicitation Topic Code:
A10-132
Solicitation Number:
2010.2
Small Business Information
Arkansas Power Electronics International
535 W. Research Center Blvd. Fayetteville, AR 72701
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2012
Title: High Temperature Silicon Carbide (SiC) Gate Driver
Agency: DOD
Contract: W56HZV-12-C-0007
Award Amount: $729,991.00
 

Abstract:

APEI, Inc."s Phase II goal is to develop, fabricate and test a compact, high temperature, high performance isolated gate drivers utilizing HTSOI integrated circuits, discrete SiC devices, and high frequency coreless magnetics. Additionally, leveraging its existing high performance high temperature SiC power modules, APEI, Inc. will integrate the developed gate driver into this SiC power module and demonstrate a complete high temperature intelligent power module by the end of this Phase II.

Principal Investigator:

Bradley Reese
Lead Engineer
(479) 443-5759
breese@apei.net

Business Contact:

Sharmila Mounce
Business Operations Manag
(479) 443-5759
smounce@apei.net
Small Business Information at Submission:

Arkansas Power Electronics International
535 W. Research Center Blvd. Suite 209 Fayetteville, AR -

EIN/Tax ID: 710810115
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No