640x512 Dualband Longwave/Longwave Infrared SLS FPA For Interceptor Seekers
In Phase I we developed a novel infrared photodiode based on Type-II InAs/GaSb strained layer superlattices (SLS) that showed pingpong dualband action, wherein the spectral response of the diode was switched between extended midwave (~ 8 micron cutoff) and longwave (~ 10 micron cutoff) infrared by the polarity of the voltage bias applied across it. In Phase II we will improve quantum efficiency in each band, minimize spectral crosstalk, fabricate 640x512 focal plane arrays with high uniformity and pixel operability, and integrate and deliver a compact portable camera with a pluggable sensor cartridge. The plug-and-play camera will enable DOD to field-test this new dualband sensor technology for missile defense applications.
Small Business Information at Submission:
22 Cotton Road Unit H, Suite 180 Nashua, NH -
Number of Employees: