In-Vacuo Passivation of High Aspect Ratio HgCdTe Surfaces
The overall goal of this project is to develop a 100 degrees C temperature ALD CdTe passivation process capable of conformally passivating high aspect ratio surfaces of HgCdTe infrared detectors. The effort is comprised of first establishing the low temperature ALD process, next in fully characterizing the resulting CdTe, then implementing in-situ sample surface preparation, and finally in passivating high aspect ratio HgCdTe samples.
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