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Company Information:

Company Name:
United Silicon Carbide, Inc.
Address:
7 Deer Park Drive, Suite East
Monmouth Junction, NJ 08852-1921
Phone:
(732) 355-0550
URL:
EIN:
271055700
DUNS:
042068101
Number of Employees:
15
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $249,114.00 2
SBIR Phase II $999,999.00 1

Award List:

6.5 kV Silicon Carbide Half-Bridge Power Switch Module for Energy Storage System Applications

Award Year / Program / Phase:
2013 / SBIR / Phase II
Award Amount:
$999,999.00
Agency:
DOE
Principal Investigator:
Abstract:
As renewable resources such as wind and solar start to penetrate the electrical infrastructure, the transient behavior of these resources requires energy storage systems, such as batteries or flywheels, to buffer the fluctuations in output. Additionally, current silicon based… More

A Novel Compact and Reliable Hybrid Silicon/Silicon Carbide Device Module for Efficient Power Conversion

Award Year / Program / Phase:
2013 / SBIR / Phase I
Award Amount:
$124,123.00
Agency:
NASA
Principal Investigator:
Leonid Fursin, Senior Research Engineer
Abstract:
United Silicon Carbide, Inc. proposes to develop a novel compact, efficient and high-temperature power module, based on unique co-packaging approach of normally-off silicon (Si) MOSFET with silicon carbide (SiC) normally-on power JFET in a cascode configuration. A much desired silicon MOS gate… More

The First JFET-Based Silicon Carbide Active Pixel Sensor UV Imager

Award Year / Program / Phase:
2013 / SBIR / Phase I
Award Amount:
$124,991.00
Agency:
NASA
Principal Investigator:
Leonid Fursin, Senior Research Engineer
Abstract:
Solar-blind ultraviolet (UV) imaging is critically important in the fields of space astronomy, national defense, and bio-chemistry. United Silicon Carbide, Inc. proposes to develop and commercialize a unique JFET-based monolithically-integrated radiation-tolerant solar blind active pixel sensor… More