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Silicon Carbide Quasi-Bipolar Junction Transistor (QBJT)-Based boost converter…

Award Information

Agency:
Department of Energy
Branch:
N/A
Award ID:
Program Year/Program:
2013 / SBIR
Agency Tracking Number:
76754
Solicitation Year:
2013
Solicitation Topic Code:
10b
Solicitation Number:
DE-FOA-0000801
Small Business Information
GeneSiC Semiconductor Inc.
43670 Trade Center Place, Suite 155 Dulles, VA 20166-2123
View profile »
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2013
Title: Silicon Carbide Quasi-Bipolar Junction Transistor (QBJT)-Based boost converter platform for up-tower wind applications
Agency: DOE
Contract: DE-FG02-13ER90714
Award Amount: $150,000.00
 

Abstract:

SiC power electronics are ideally suited for reducing the size and weight of power electronics systems that are used in wind power converters. Present power electronics systems require large transformers which operate a modest frequencies that prevents their use on top of the turbine tower. The electrical parasitics introduced by the interconnections between wind turbine and power conversion electronics limits the efficiency and usability of power electronics. Direct grid connection of the wind turbine is not possible due to these limitations. Leveraging a strong expertise in & gt; 10 kV capable SiC power Quasi-Bipolar Junction Transistor (QBJT) device designs and ultra-high frequency power conversion enabled by SiC SJTs, this proposed SBIR program will demonstrate an unprecedented compactness and efficiencies in wind power conversion circuits by leveraging SiC QBJT and Super Junction Transistor (SJT) for up-tower wind energy applications. This topology makes use of the newly developed 1200 V, 50 A SiC SJT and 13 kV, 10 A SiC QBJT for this application. The 690 V, 3- phase output of the wind turbine converter system is interfaced with the 13.8 kV, 60 Hz, 3-phase medium voltage distribution grid using this topology. The use of SiC based SJT devices will result in very small loss (high efficiency) for the overall power conversion system. The proposed power conversion system is for 1 MVA system but can be easily scaled up to 3.5 MW (typical large wind turbine ratings). This research will usher a new generation of high-voltage SiC circuits, which will find widespread application in utility-scale power conversion, rail traction and medical equipment. Successful implementation of the proposed technology will dramatically improve the performance and reliability of power electronics in renewable energy applications and Smart Grid elements. This in turn will increase market acceptance of these high-end products and thereby drive jobs creation in the US.

Principal Investigator:

Siddarth Sundaresan
Dr.
7039968200
siddarth.sundaresan@genesicsemi.com

Business Contact:

Ranbir Singh
Dr.
7039968200
ranbir.singh@genesicsemi.com
Small Business Information at Submission:

GeneSiC Semiconductor Inc, Dulles, Virginia
43670 Trade Center Place Suite 155 Dulles, VA 20166-2123

EIN/Tax ID: 201151855
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No