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Company Information:

Company Name: Avogy
City: San Jose
State: CA
Zip+4: 95134-
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: (408) 684-5219

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $362,979.00 2
SBIR Phase II $3,000,000.00 2

Award List:

High Power Vertical Gallium Nitride (GaN) Transistors on Native GaN Substrates for Power Switching Applications

Award Year / Program / Phase: 2013 / SBIR / Phase I
Agency: DOD
Principal Investigator: Don Disney, Senior Director of Techno – (408) 684-5223
Award Amount: $137,979.00
Abstract:
Avogy has a unique approach to producing vertical GaN-on-GaN power devices that have fundamental advantages over silicon, silicon carbide, and lateral GaN devices. With this SBIR funding, we will demonstrate the feasibility of a normally-off vertical GaN transistor with a blocking voltage over… More

Vertical GaN transistors on bulk GaN substrates

Award Year / Program / Phase: 2013 / SBIR / Phase I
Agency / Branch: DOE / ARPA-E
Principal Investigator: Isik Kizilyalli, CTO – (408) 684-5209
Award Amount: $225,000.00
Abstract:
In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide… More

Vertical GaN transistors on bulk GaN substrates

Award Year / Program / Phase: 2013 / SBIR / Phase II
Agency / Branch: DOE / ARPA-E
Principal Investigator: Isik Kizilyalli, CTO – (408) 684-5209
Award Amount: $1,500,000.00
Abstract:
In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide… More

Vertical GaN transistors on bulk GaN substrates

Award Year / Program / Phase: 2014 / SBIR / Phase II
Agency / Branch: DOE / ARPA-E
Principal Investigator: Isik Kizilyalli, CTO – (408) 684-5209
Award Amount: $1,500,000.00
Abstract:
In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide… More