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Company Information:

Company Name:
Avogy, Inc.
Address:
677 River Oaks Pkwy
San Jose, CA 95134-
Phone:
(408) 684-5219
URL:
N/A
EIN:
272434403
DUNS:
60635247
Number of Employees:
20
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $362,979.00 2
SBIR Phase II $3,585,744.00 3

Award List:

High Power Vertical Gallium Nitride (GaN) Transistors on Native GaN Substrates for Power Switching Applications

Award Year / Program / Phase:
2013 / SBIR / Phase I
Award Amount:
$137,979.00
Agency:
DOD
Principal Investigator:
Don Disney, Senior Director of Techno – (408) 684-5223
Abstract:
Avogy has a unique approach to producing vertical GaN-on-GaN power devices that have fundamental advantages over silicon, silicon carbide, and lateral GaN devices. With this SBIR funding, we will demonstrate the feasibility of a normally-off vertical GaN transistor with a blocking voltage over… More

Vertical GaN transistors on bulk GaN substrates

Award Year / Program / Phase:
2013 / SBIR / Phase I
Award Amount:
$225,000.00
Agency / Branch:
DOE / ARPA-E
Principal Investigator:
Isik Kizilyalli, CTO – (408) 684-5209
Abstract:
In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide… More

Vertical GaN transistors on bulk GaN substrates

Award Year / Program / Phase:
2013 / SBIR / Phase II
Award Amount:
$1,500,000.00
Agency / Branch:
DOE / ARPA-E
Principal Investigator:
Isik Kizilyalli, CTO – (408) 684-5209
Abstract:
In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide… More

Vertical GaN transistors on bulk GaN substrates

Award Year / Program / Phase:
2014 / SBIR / Phase II
Award Amount:
$1,500,000.00
Agency / Branch:
DOE / ARPA-E
Principal Investigator:
Isik Kizilyalli, CTO – (408) 684-5209
Abstract:
In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide… More

High Power Vertical Gallium Nitride (GaN) Transistors on Native GaN Substrates for Power Switching Applications

Award Year / Program / Phase:
2014 / SBIR / Phase II
Award Amount:
$585,744.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Isik Kizilyalli, Chief Technical Officer – (408) 684-5209
Abstract:
In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 5000V or higher, normally-off operation, and a drain current rating of 1A is proposed. These devices will feature vertical current flow, a threshold voltage of>2V, minimal to no… More