High Power Vertical Gallium Nitride (GaN) Transistors on Native GaN Substrates for Power Switching Applications
Avogy has a unique approach to producing vertical GaN-on-GaN power devices that have fundamental advantages over silicon, silicon carbide, and lateral GaN devices. With this SBIR funding, we will demonstrate the feasibility of a normally-off vertical GaN transistor with a blocking voltage over 5000V, a threshold voltage greater than 1V, and specific on-resistance less than 30 mohm-cm2.
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Senior Director of Techno
677 River Oaks Pkwy San Jose, CA -
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