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High Power Vertical Gallium Nitride (GaN) Transistors on Native GaN Substrates…

Award Information

Agency:
Department of Defense
Branch:
N/A
Award ID:
Program Year/Program:
2013 / SBIR
Agency Tracking Number:
N122-135-0058
Solicitation Year:
2012
Solicitation Topic Code:
N122-135
Solicitation Number:
2012.2
Small Business Information
Avogy
677 River Oaks Parkway San Jose, CA 95134-
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2013
Title: High Power Vertical Gallium Nitride (GaN) Transistors on Native GaN Substrates for Power Switching Applications
Agency: DOD
Contract: N00014-13-M-0034
Award Amount: $137,979.00
 

Abstract:

Avogy has a unique approach to producing vertical GaN-on-GaN power devices that have fundamental advantages over silicon, silicon carbide, and lateral GaN devices. With this SBIR funding, we will demonstrate the feasibility of a normally-off vertical GaN transistor with a blocking voltage over 5000V, a threshold voltage greater than 1V, and specific on-resistance less than 30 mohm-cm2.

Principal Investigator:

Don Disney
Senior Director of Techno
(408) 684-5223
don@epowersoft.com

Business Contact:

Isik Kizilyalli
Chief Executive Officer
(408) 684-5209
isik@epowersoft.com
Small Business Information at Submission:

Avogy, Inc.
677 River Oaks Pkwy San Jose, CA -

EIN/Tax ID: 272434403
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No