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Compact , High-Power Density, High-Voltage Silicon Carbide (SiC) Based Solid-State Circuit Protection Device (SSCPD) Incorporating Advanced Power Pack
Award Information
Agency: Department of Defense
Branch: Army
Contract: W56HZV-13-C-0119
Agency Tracking Number: A123-118-0266
Amount:
$99,944.00
Phase:
Phase I
Program:
SBIR
Solicitation Topic Code:
A123-118
Solicitation Number:
2012.3
Timeline
Solicitation Year:
2012
Award Year:
2013
Award Start Date (Proposal Award Date):
2013-03-18
Award End Date (Contract End Date):
2013-09-18
Small Business Information
535 W. Research Center Blvd.
Fayetteville, AR
-
United States
DUNS:
121539790
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Daniel Martin
Title: Senior Power Electronics Engineer
Phone: (479) 443-5759
Email: dmartin@apei.net
Title: Senior Power Electronics Engineer
Phone: (479) 443-5759
Email: dmartin@apei.net
Business Contact
Name: Sharmila Mounce
Title: Business Operations Manager
Phone: (479) 443-5759
Email: smounce@apei.net
Title: Business Operations Manager
Phone: (479) 443-5759
Email: smounce@apei.net
Research Institution
Name: Stub
Abstract
This SBIR Phase I project seeks to develop an advanced, flexible, robust, high-power density, high-voltage (600 V), solid-state circuit protection device (SSCPD) through the incorporation of silicon carbide (SiC) device technology, the implementation of advanced power packaging, and novel fault detection and protection schemes. The proposed SiC-based SSCPD will address the present and future needs of many Army applications, specifically targeting the present needs of the Joint Light Tactical Vehicle (JLTV) and other future Army vehicles, e.g., Ground Combat Vehicle (GCV).
* Information listed above is at the time of submission. *
