High Temperature Silicon Carbide (SiC) Gate Driver
Agency / Branch:
DOD / ARMY
The proposed modular high temperature Time Domain Isolated (TDI) Driver is a large step forward in technology, enabling the inherent benefits of current SiC switching devices. Designed to operate in the same environment as the switching devices the gate driver can finally be collocated with the SiC MOSFETs and JFETs being driven. Maximized performance at high speeds, precise switching waveforms at the gates, depletion mode JFET capable, and integrated protection feature within the device will deliver the realization of present and future ARMY requirements.
Small Business Information at Submission:
Ross W. Bird
1965 Lycoming Creek Road Suite 205 Williamsport, PA 17701
Number of Employees: