USA flag logo/image

An Official Website of the United States Government

Packaging High Power Photodetectors for 100 MHz to 100 GHz RF Photonic…

Award Information

Department of Defense
Award ID:
Program Year/Program:
2013 / SBIR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
Phase 1
Fiscal Year: 2013
Title: Packaging High Power Photodetectors for 100 MHz to 100 GHz RF Photonic Applications
Agency: DOD
Contract: FA8650-13-M-1648
Award Amount: $150,000.00


ABSTRACT: Discovery Semiconductors will assemble high power InGaAs/InP photodiodes with 50 ohm internal termination in a fiber-pigtailed, W1-connectorized microwave package having the following specifications: (a) Responsivity>0.7 A/W at 1550 nm wavelength; (b) -3 dB Bandwidth>60 GHz; (c) -9 dB Bandwidth>80 GHz; (d) 1 dB Compression Photocurrent>50 mA @ 60 GHz modulation frequency and>50% modulation depth; and (e) 1 dB Compression Photocurrent Density>0.64 mA/um^2. One packaged device will be delivered each to Lockheed Martin Space Systems Company and Air Force for system level testing. Additionally, packaging techniques for balanced and arrayed photodiodes will be investigated. BENEFIT: The anticipated benefits/applications of this work are :(1) 60 GHz cellular; (2) Hybrid fiber/wireless systems from X-Band to W-Band; (3)Optical phased array radar; and (4)Space systems fiber optic transponders.

Principal Investigator:

Shubo Datta
Chief Scientist
(609) 434-1311

Business Contact:

Abhay Joshi
(609) 434-1311
Small Business Information at Submission:

Discovery Semiconductors, Inc.
119 Silvia Street Ewing, NJ -

EIN/Tax ID: 223140182
Number of Employees:
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No