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SBIR Phase I: A Novel Crystal Growth Technology for Production of ZnO Single…
- Small Business Information
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Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 1
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Fiscal Year: 2010Title: SBIR Phase I: A Novel Crystal Growth Technology for Production of ZnO Single Crystal Substrates for Light Emitters and DetectorsAgency: NSFContract: 0943961Award Amount: $150,000.00
Abstract:
This Small Business Innovation Research (SBIR) Phase I project will investigate a novel technique for growing large-diameter, high-quality ZnO single crystals. ZnO single crystal substrates are suitable for fabrication of epitaxial structures for both GaN-based and ZnO-based devices, such as light emitters and detectors, as well as for high power, high temperature and high frequency devices. The proposed growth technique has the potential to produce large diameter, high quality ZnO bulk single crystal boules in an efficient manner at a low cost. Commercialization of high-quality, low-cost ZnO single crystal substrates may have a dramatic impact on the development and commercialization of both GaN-based and ZnO-based devices for a variety of applications.Small Business Information at Submission:Fairfield Crystal
8 South End Plaza New Milford, CT 06776EIN/Tax ID: 201702779DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
Award Information
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Agency: National Science Foundation |
Branch: N/A |
Award ID: 98752 |
Program Year/Program: 2010 / SBIR |
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Agency Tracking Number: 0943961 |
Solicitation Year: N/A |
Solicitation Topic Code: AM1 |
Solicitation Number: N/A |