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SBIR Phase I: A Novel Crystal Growth Technology for Production of ZnO Single…

Award Information

Agency:
National Science Foundation
Branch:
N/A
Award ID:
98752
Program Year/Program:
2010 / SBIR
Agency Tracking Number:
0943961
Solicitation Year:
N/A
Solicitation Topic Code:
AM1
Solicitation Number:
N/A
Small Business Information
Fairfield Crystal Technology
8 South End Plaza New Milford, CT 06776-4200
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2010
Title: SBIR Phase I: A Novel Crystal Growth Technology for Production of ZnO Single Crystal Substrates for Light Emitters and Detectors
Agency: NSF
Contract: 0943961
Award Amount: $150,000.00
 

Abstract:

This Small Business Innovation Research (SBIR) Phase I project will investigate a novel technique for growing large-diameter, high-quality ZnO single crystals. ZnO single crystal substrates are suitable for fabrication of epitaxial structures for both GaN-based and ZnO-based devices, such as light emitters and detectors, as well as for high power, high temperature and high frequency devices. The proposed growth technique has the potential to produce large diameter, high quality ZnO bulk single crystal boules in an efficient manner at a low cost. Commercialization of high-quality, low-cost ZnO single crystal substrates may have a dramatic impact on the development and commercialization of both GaN-based and ZnO-based devices for a variety of applications.

Principal Investigator:

Shaoping Wang
PhD
8603542111
swang@fairfieldcrystal.com

Business Contact:

Shaoping Wang
PhD
8603542111
swang@fairfieldcrystal.com
Small Business Information at Submission:

Fairfield Crystal
8 South End Plaza New Milford, CT 06776

EIN/Tax ID: 201702779
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No