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Novel Growth and Processing of an Extremely High Performance, Low Defect FPAs…

Award Information

Agency:
Department of Defense
Branch:
Army
Award ID:
97611
Program Year/Program:
2010 / SBIR
Agency Tracking Number:
A092-094-0694
Solicitation Year:
N/A
Solicitation Topic Code:
Army 09-094
Solicitation Number:
N/A
Small Business Information
GALAXY COMPOUND SEMICONDUCTORS, INC.
9922 E. Montgomery #7 Spokane, WA 99206 4158
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2010
Title: Novel Growth and Processing of an Extremely High Performance, Low Defect FPAs Utilizing HgCdTe on InSb Substrates
Agency / Branch: DOD / ARMY
Contract: W15P7T-10-C-S202
Award Amount: $69,998.00
 

Abstract:

HgCdTe based IR detectors are used in critical military thermal imaging systems and free-space communication. A key component for stealth defense is the megapixel IRFPAs used for fighter aircraft. A significant aspect inhibiting widespread use of HgCdTe for LWIR and VLWIR detectors is the difficulty of obtaining suitably matched large-diameter substrates. Czochralski grown InSb substrates show promise as a substrate for HgCdTe deposition. An opportunity exists to establish a novel proof-of-concept epitaxial growth of HgCdTe on domestic 150mm InSb substrates for use in advanced LWIR/VLWIR FPA applications. The Phase I program will focus on f?oepi-readyf?? InSb surface development to facilitate routine HgCdTe MBE growth. Interface stability (InTe precipitates, In pooling) will be examined. The critical milestone will be the demonstration of HgCdTe epi on InSb with EPD

Principal Investigator:

L. Allen
Technology Programs Director
5098921114
lisa_allen@alum.mit.edu

Business Contact:

Kevin Blanchat
President
5098921114
lacaze@roboticresearch.com
Small Business Information at Submission:

Galaxy Compound Semiconductors, Inc.
9922 E. Montgomery #7 Spokane, WA 99206

EIN/Tax ID: 911992916
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No